| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,520 pcs
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8520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FJD5553TM from ON Semiconductor is a bipolar junction transistor (BJT) designed for high voltage and fast switching applications. This NPN transistor offers a maximum collector-emitter voltage (VCEO Max) of 400V and a maximum DC collector current of 3A.
It is housed in a DPAK surface-mount package, making it suitable for automated assembly processes. The transistor operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 1250mW.
Key electrical characteristics include a minimum DC collector/base gain (Hfe) of 10. The FJD5553TM is part of the Fjd5553 series and is supplied on a reel for high-volume manufacturing.
This component is utilized in various electronic circuits requiring robust switching capabilities and high voltage handling. Its specifications make it a reliable choice for power supply circuits, inverters, and other demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO Max) for the FJD5553TM is 400V.
The FJD5553TM has a maximum DC collector current of 3A.
The FJD5553TM is supplied in a DPAK package.
The FJD5553TM operates between -55°C and +150°C.
The power dissipation (Pd) for the FJD5553TM is 1250mW.