FJD3305H1TM The FJD3305H1TM is a surface-mount NPN bipolar transistor rated for 400 V collector-emitter voltage and 4 A collector current. It is offered in a TO-252AA (DPak) package with 150°C maximum junction temperature.
Mfr Part #:

FJD3305H1TM

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FJD3305H1TM is a surface-mount NPN bipolar transistor rated for 400 V collector-emitter voltage and 4 A collector current. It is offered in a TO-252AA (DPak) package with 150°C maximum junction temperature.
Total Stock: 2,500 pcs
$ Price Range: $0.46

FJD3305H1TM Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request

FJD3305H1TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Medical Grade
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

FJD3305H1TM Description

Short technical summary and product information.

The FJD3305H1TM is a surface-mount NPN bipolar junction transistor manufactured by ON Semiconductor. It is rated for a collector-emitter breakdown voltage of 400 V, a collector current of 4 A, and a power dissipation of 1.1 W. The DC current gain has a minimum of 8 at Ic=2A and Vce=5V, and the collector-emitter saturation voltage is 1 V maximum at Ib=1A and Ic=4A.

 

The transistor offers a transition frequency of 4 MHz, making it useful in power switching and medium-frequency circuits. Its high breakdown voltage and 4 A current capability support applications in power management, line-operated power supplies, and general-purpose switching stages.

 

The FJD3305H1TM is supplied in a TO-252-3 (DPak) surface mount package with supplier device package TO-252AA, designed for automated PCB assembly. The maximum junction temperature is 150°C. The device is listed as RoHS3 compliant, though this compliance data is unverified.

FJD3305H1TM Quick Information

Product Type: NPN Bipolar Transistor
Canonical Name: FJD3305H1TM NPN Bipolar Transistor
Subcategory: Single NPN

FJD3305H1TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FJD3305H1TM Estimated Pricing

Qty Low High
651+ $0.46 $0.46

Estimated market price range - modelled values for guidance only, not live distributor offers.

FJD3305H1TM Features

  • NPN transistor with 400 V collector-emitter rating.
  • Collector current rated at 4 A.
  • Power dissipation of 1.1 W.
  • Surface mount TO-252AA DPak package.
  • Maximum junction temperature of 150°C.

FJD3305H1TM Applications

  • High voltage rating supports 400 V circuits.
  • 4 A current capability handles medium-power loads.
  • Surface mount package suits automated PCB assembly.
  • Suitable for high-voltage switching circuits.

FJD3305H1TM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage?

The collector-emitter breakdown voltage (VCEO) is 400 V.

What package is the FJD3305H1TM available in?

The device is offered in a TO-252-3 (DPak, 2 leads + tab, SC-63) surface mount package, with TO-252AA as the supplier device package.

What is the maximum junction temperature?

The maximum operating junction temperature is 150°C.

Is this device RoHS compliant?

The device is listed as RoHS3 compliant, but this status is unverified and should be confirmed from the datasheet or manufacturer.

What is the collector current rating?

The collector current rating is 4 A.

What is the DC current gain (hFE)?

The minimum DC current gain is 8 at Ic=2A and Vce=5V.

What is the transition frequency?

The transition frequency is 4 MHz.

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