FJD3076TM NPN bipolar (BJT) transistor in a surface-mount D-Pak package. Features 32V collector-emitter voltage, 2A collector current, and 100MHz transition frequency.
Mfr Part #:

FJD3076TM

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar (BJT) transistor in a surface-mount D-Pak package. Features 32V collector-emitter voltage, 2A collector current, and 100MHz transition frequency.
Total Stock: 4,474 pcs
$ Price Range: $0.16

FJD3076TM Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,974 pcs
1974 pcs On Request 1 On Request On Request 12+ On Request On Request

FJD3076TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Medical Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

FJD3076TM Description

Short technical summary and product information.

FJD3076TM is an NPN bipolar junction transistor manufactured by ON Semiconductor. It is designed for general-purpose switching and amplification in low-voltage applications. The device provides a collector-emitter breakdown voltage of 32V and a continuous collector current rating of 2A.

 

With a minimum DC current gain of 130 at 500mA collector current and a collector-emitter saturation voltage of 800mV at 2A, the transistor is suited for moderate power switching. The transition frequency of 100MHz supports high-frequency signal applications.

 

The transistor is housed in a TO-252-3 (DPak) surface-mount package with a supplier device package designation of D-Pak. It is rated for a maximum junction temperature of 150°C and power dissipation of 1W.

 

This single NPN transistor is suitable for discrete driver stages, relay and solenoid drivers, and low-voltage power management circuits.

FJD3076TM Quick Information

Product Type: Bipolar (BJT) Transistor
Canonical Name: NPN Bipolar (BJT) Transistor
Subcategory: Single NPN Transistor

FJD3076TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FJD3076TM Estimated Pricing

Qty Low High
2,500+ $0.16 $0.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

FJD3076TM Features

  • NPN bipolar transistor for switching and amplification.
  • 32V collector-emitter voltage rating.
  • 2A continuous collector current capability.
  • 100MHz transition frequency.
  • Surface-mount D-Pak package.

FJD3076TM Applications

  • Used in discrete switching circuits.
  • Suitable for low-voltage amplifier stages.
  • Common in relay and solenoid drivers.

FJD3076TM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the FJD3076TM?

The collector-emitter voltage (Vceo) is rated at 32V.

What is the maximum collector current?

The maximum collector current is 2A.

What package is the FJD3076TM available in?

It comes in a TO-252-3 (DPak) surface-mount package with 2 leads plus tab; the supplier device package is D-Pak.

What is the maximum junction operating temperature?

The maximum junction temperature is 150°C.

Is the FJD3076TM RoHS compliant?

The part is listed as RoHS3 compliant in the component database, but this status is unverified in the datasheet.

What is the minimum DC current gain (hFE)?

The minimum hFE is 130 at Ic=500mA and Vce=3V.

What is the transition frequency?

The transition frequency is 100MHz.

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