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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,974 pcs
|
1974 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
FJD3076TM is an NPN bipolar junction transistor manufactured by ON Semiconductor. It is designed for general-purpose switching and amplification in low-voltage applications. The device provides a collector-emitter breakdown voltage of 32V and a continuous collector current rating of 2A.
With a minimum DC current gain of 130 at 500mA collector current and a collector-emitter saturation voltage of 800mV at 2A, the transistor is suited for moderate power switching. The transition frequency of 100MHz supports high-frequency signal applications.
The transistor is housed in a TO-252-3 (DPak) surface-mount package with a supplier device package designation of D-Pak. It is rated for a maximum junction temperature of 150°C and power dissipation of 1W.
This single NPN transistor is suitable for discrete driver stages, relay and solenoid drivers, and low-voltage power management circuits.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.16 | $0.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vceo) is rated at 32V.
The maximum collector current is 2A.
It comes in a TO-252-3 (DPak) surface-mount package with 2 leads plus tab; the supplier device package is D-Pak.
The maximum junction temperature is 150°C.
The part is listed as RoHS3 compliant in the component database, but this status is unverified in the datasheet.
The minimum hFE is 130 at Ic=500mA and Vce=3V.
The transition frequency is 100MHz.