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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Collector Cut-Off Current | |
| Collector-Base Breakdown Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cut-off Current | |
| Emitter-Base Breakdown Voltage | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Standard Package Quantity | |
| Storage Temperature | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FJC1308PTF is a PNP epitaxial silicon transistor manufactured by On Semiconductor. It is designed for use in audio power amplifier applications, offering high current capability and low collector-emitter saturation voltage.
This transistor has a collector-emitter breakdown voltage of -30V and a DC collector current rating of -3A. The DC current gain (hFE) ranges from 80 to 390 at VCE=-2V and IC=-0.5A. The collector-emitter saturation voltage is typically -0.45V at IC=-1.5A and IB=-0.15A.
The device is housed in a surface-mount TO-243AA package (SOT-89-3) with a power dissipation of 500mW. It is supplied in tape and reel packaging with a standard quantity of 4000 units per reel.
-30V
Surface-mount TO-243AA (SOT-89-3) package.
Maximum junction temperature is 150°C, storage temperature range is -55°C to 150°C.
It is listed as RoHS3 compliant, but this status is unverified.
80 to 390 at VCE=-2V, IC=-0.5A.
-0.45V maximum at IC=-1.5A, IB=-0.15A.
FJC1963.