FJC1308PTF PNP epitaxial silicon transistor designed for audio power amplifier applications. Features 30V collector-emitter breakdown voltage, 3A DC collector current, and low saturation voltage.
Mfr Part #:

FJC1308PTF

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP epitaxial silicon transistor designed for audio power amplifier applications. Features 30V collector-emitter breakdown voltage, 3A DC collector current, and low saturation voltage.
Total Stock: 4,000 pcs

FJC1308PTF Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request 09+ On Request On Request

FJC1308PTF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base - Emitter Saturation Voltage
Collector Cut-Off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cut-off Current
Emitter-Base Breakdown Voltage
Mounting Type
Operating Temperature
Power
Standard Package Quantity
Storage Temperature
Storage Temperature Range
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

FJC1308PTF Description

Short technical summary and product information.

The FJC1308PTF is a PNP epitaxial silicon transistor manufactured by On Semiconductor. It is designed for use in audio power amplifier applications, offering high current capability and low collector-emitter saturation voltage.

 

This transistor has a collector-emitter breakdown voltage of -30V and a DC collector current rating of -3A. The DC current gain (hFE) ranges from 80 to 390 at VCE=-2V and IC=-0.5A. The collector-emitter saturation voltage is typically -0.45V at IC=-1.5A and IB=-0.15A.

 

The device is housed in a surface-mount TO-243AA package (SOT-89-3) with a power dissipation of 500mW. It is supplied in tape and reel packaging with a standard quantity of 4000 units per reel.

FJC1308PTF Quick Information

Product Type: PNP Transistor
Canonical Name: FJC1308PTF PNP Epitaxial Silicon Transistor
Subcategory: PNP Bipolar Junction Transistor

FJC1308PTF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FJC1308PTF Features

  • PNP epitaxial silicon transistor design.
  • 30V collector-emitter breakdown voltage.
  • 3A DC collector current rating.
  • Low saturation voltage of 0.45V.
  • Surface-mount SOT-89-3 package.

FJC1308PTF Applications

  • Audio power amplifier output stages.
  • High current switching applications.
  • Complementary to FJC1963 NPN transistor.

FJC1308PTF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the FJC1308PTF?

-30V

What package does the FJC1308PTF come in?

Surface-mount TO-243AA (SOT-89-3) package.

What are the operating temperature limits for the FJC1308PTF?

Maximum junction temperature is 150°C, storage temperature range is -55°C to 150°C.

Is the FJC1308PTF RoHS compliant?

It is listed as RoHS3 compliant, but this status is unverified.

What is the DC current gain of the FJC1308PTF?

80 to 390 at VCE=-2V, IC=-0.5A.

What is the collector-emitter saturation voltage?

-0.45V maximum at IC=-1.5A, IB=-0.15A.

What is the complementary NPN transistor for this part?

FJC1963.

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