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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,200 pcs
|
3200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FJB5555TM is an NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring high voltage and moderate current capability.
Key electrical specifications include a collector-emitter voltage (Vceo) of 400V, collector current (Ic) of 5A, and power dissipation (Pd) of 1.6W. The device offers a minimum DC current gain (hFE) of 20 at Ic=800mA and Vce=3V, and a maximum Vce saturation of 1.5V at Ib=1A and Ic=3.5A.
The transistor is housed in a TO-263-3 / D²Pak (2 Leads + Tab) / TO-263AB surface mount package, with a supplier device package of D2PAK (TO-263). The maximum junction temperature is 150°C.
This part is suitable for power management circuits, switching regulators, and other high-voltage switching applications where a surface mount NPN transistor is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
| 10+ | $1.65 | $1.65 |
| 100+ | $1.12 | $1.12 |
| 800+ | $0.80 | $0.80 |
| 1,600+ | $0.74 | $0.74 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vceo) is 400 V.
The maximum collector current (Ic) is 5 A.
The device is available in TO-263-3, D²Pak (2 Leads + Tab), TO-263AB; supplier device package is D2PAK (TO-263).
The maximum junction temperature (TJ) is 150 °C.
RoHS3 compliance is indicated but unverified; treat as low confidence.
The minimum DC current gain (hFE) is 20 at Ic=800mA, Vce=3V.