FJB5555TM FJB5555TM is an NPN bipolar junction transistor in D2PAK surface mount package, rated for 400V collector-emitter voltage and 5A collector current with 1.6W power dissipation.
Mfr Part #:

FJB5555TM

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FJB5555TM is an NPN bipolar junction transistor in D2PAK surface mount package, rated for 400V collector-emitter voltage and 5A collector current with 1.6W power dissipation.
Total Stock: 3,200 pcs
$ Price Range: $0.74 - $2.56

FJB5555TM Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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3,200 pcs
3200 pcs On Request 1 On Request On Request On Request On Request On Request

FJB5555TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

FJB5555TM Description

Short technical summary and product information.

The FJB5555TM is an NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring high voltage and moderate current capability.

 

Key electrical specifications include a collector-emitter voltage (Vceo) of 400V, collector current (Ic) of 5A, and power dissipation (Pd) of 1.6W. The device offers a minimum DC current gain (hFE) of 20 at Ic=800mA and Vce=3V, and a maximum Vce saturation of 1.5V at Ib=1A and Ic=3.5A.

 

The transistor is housed in a TO-263-3 / D²Pak (2 Leads + Tab) / TO-263AB surface mount package, with a supplier device package of D2PAK (TO-263). The maximum junction temperature is 150°C.

 

This part is suitable for power management circuits, switching regulators, and other high-voltage switching applications where a surface mount NPN transistor is required.

FJB5555TM Quick Information

Product Type: Bipolar Junction Transistor
Canonical Name: FJB5555TM NPN Bipolar Junction Transistor
Subcategory: Single NPN

FJB5555TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FJB5555TM Estimated Pricing

Qty Low High
1+ $2.56 $2.56
10+ $1.65 $1.65
100+ $1.12 $1.12
800+ $0.80 $0.80
1,600+ $0.74 $0.74

Estimated market price range - modelled values for guidance only, not live distributor offers.

FJB5555TM Features

  • NPN bipolar junction transistor design.
  • 400V collector-emitter breakdown voltage.
  • 5A continuous collector current rating.
  • Surface mount D2PAK (TO-263) package.

FJB5555TM Applications

  • Use in high-voltage switching power supplies.
  • Ideal for DC-DC converter and inverter circuits.
  • Suitable for motor control drive stages.

FJB5555TM FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the FJB5555TM?

The collector-emitter voltage (Vceo) is 400 V.

What is the maximum collector current?

The maximum collector current (Ic) is 5 A.

What is the package type?

The device is available in TO-263-3, D²Pak (2 Leads + Tab), TO-263AB; supplier device package is D2PAK (TO-263).

What is the operating junction temperature range?

The maximum junction temperature (TJ) is 150 °C.

Is the FJB5555TM RoHS compliant?

RoHS3 compliance is indicated but unverified; treat as low confidence.

What is the DC current gain (hFE) at typical test conditions?

The minimum DC current gain (hFE) is 20 at Ic=800mA, Vce=3V.

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