FJAF4310OTU NPN bipolar transistor with 140V collector-emitter breakdown voltage, 10A collector current, and 80W power dissipation. Housed in a TO-3PF through-hole package.
Mfr Part #:

FJAF4310OTU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar transistor with 140V collector-emitter breakdown voltage, 10A collector current, and 80W power dissipation. Housed in a TO-3PF through-hole package.
Total Stock: 1,744 pcs
$ Price Range: $1.05

FJAF4310OTU Available from 1 distributor

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,744 pcs
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FJAF4310OTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Medical Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

FJAF4310OTU Description

Short technical summary and product information.

The FJAF4310OTU is an NPN bipolar junction transistor manufactured by ON Semiconductor. It is designed for general-purpose switching and amplification applications requiring medium voltage and current handling.

 

With a collector-emitter breakdown voltage of 140 V and a continuous collector current rating of 10 A, this transistor can handle up to 80 W of power dissipation. It features a transition frequency of 30 MHz, making it suitable for moderate-speed switching. The DC current gain (hFE) is guaranteed to be at least 70 at a collector current of 3 A and Vce of 4 V, and the collector-emitter saturation voltage is typically 500 mV at a base current of 500 mA and collector current of 5 A.

 

The device is offered in a TO-3P-3 Full Pack (TO-3PF) through-hole package, which provides good thermal performance. The maximum junction temperature is 150°C. The mounting type is through-hole, suitable for PCB mounting with appropriate heat sinking.

 

The FJAF4310OTU is listed as RoHS3 compliant, REACH unaffected, and has an MSL rating of 1 (unlimited). These compliance statuses are unverified from the datasheet but are based on manufacturer data.

FJAF4310OTU Quick Information

Product Type: NPN Bipolar Transistor
Canonical Name: FJAF4310OTU NPN Bipolar Transistor
Subcategory: Single NPN

FJAF4310OTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FJAF4310OTU Estimated Pricing

Qty Low High
720+ $1.05 $1.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

FJAF4310OTU Features

  • NPN bipolar transistor with 140V breakdown voltage.
  • Continuous collector current rating of 10A.
  • Power dissipation capability of 80W.
  • Transition frequency of 30MHz for moderate-speed switching.
  • TO-3PF through-hole package for easy mounting.

FJAF4310OTU Applications

  • Used in power supply switching circuits.
  • Suitable for motor control applications.
  • Ideal for audio amplifier output stages.
  • Can be used in DC-DC converter designs.

FJAF4310OTU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the FJAF4310OTU?

The collector-emitter breakdown voltage (Vceo) is 140 V.

What is the maximum collector current rating?

The maximum continuous collector current (Ic) is 10 A.

What is the power dissipation capability?

The power dissipation (Pd) is 80 W.

What is the operating junction temperature range?

The maximum operating junction temperature is 150°C.

What package is the FJAF4310OTU available in?

It is available in a TO-3P-3 Full Pack (TO-3PF) through-hole package.

Is the FJAF4310OTU RoHS compliant?

Yes, it is listed as RoHS3 compliant (unverified).

What is the DC current gain (hFE) at 3A?

The minimum hFE is 70 at Ic = 3 A and Vce = 4 V.

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