FJAF4210YTU FJAF4210YTU is a PNP bipolar junction transistor from On Semiconductor, rated for 140V collector-emitter voltage and 10A collector current, with 80W power dissipation. Housed in a TO-3PF through-hole package.
Mfr Part #:

FJAF4210YTU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FJAF4210YTU is a PNP bipolar junction transistor from On Semiconductor, rated for 140V collector-emitter voltage and 10A collector current, with 80W power dissipation. Housed in a TO-3PF through-hole package.
Total Stock: 490 pcs
$ Price Range: $1.95

FJAF4210YTU Available from 1 distributor

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FJAF4210YTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

FJAF4210YTU Description

Short technical summary and product information.

The FJAF4210YTU is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring a collector-emitter voltage (Vceo) of 140V and a continuous collector current (Ic) of 10A. The device can dissipate up to 80W of power, making it suitable for moderate-power circuits.

 

Electrical characteristics include a minimum DC current gain (hFE) of 90 at Ic=3A and Vce=4V, and a maximum collector-emitter saturation voltage (Vce(sat)) of 500mV at Ib=500mA and Ic=5A. The transition frequency (ft) is 30 MHz, indicating capability for moderate-speed switching.

 

The transistor is supplied in a TO-3PF (TO-3P Full Pack) through-hole package, which provides a fully insulated case for easy mounting without an additional insulator. The operating junction temperature range extends to 150°C.

FJAF4210YTU Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: FJAF4210YTU PNP Bipolar Transistor, 140V Vceo, 10A Ic, TO-3PF Package
Subcategory: Single PNP

FJAF4210YTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FJAF4210YTU Estimated Pricing

Qty Low High
154+ $1.95 $1.95

Estimated market price range - modelled values for guidance only, not live distributor offers.

FJAF4210YTU Features

  • PNP bipolar junction transistor design.
  • Rated for 140V collector-emitter voltage.
  • Supports 10A continuous collector current.
  • 80W power dissipation capability.
  • TO-3PF through-hole insulated package.

FJAF4210YTU Applications

  • Power switching circuits up to 10A.
  • Linear voltage regulator output stages.
  • Motor and solenoid driver circuits.
  • General-purpose medium-power amplification.

FJAF4210YTU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the FJAF4210YTU?

The maximum collector-emitter voltage (Vceo) is 140V.

What is the maximum collector current rating?

The maximum continuous collector current (Ic) is 10A.

What package does the FJAF4210YTU come in?

It comes in a TO-3PF (TO-3P Full Pack) through-hole package.

What is the power dissipation of this transistor?

The power dissipation (Pd) is 80W.

What is the DC current gain (hFE) of the FJAF4210YTU?

The minimum DC current gain (hFE) is 90, tested at Ic=3A and Vce=4V.

What is the transition frequency of this transistor?

The transition frequency (ft) is 30 MHz.

What is the maximum operating junction temperature?

The maximum operating junction temperature (Tj) is 150°C.

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