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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
490 pcs
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490 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FJAF4210YTU is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring a collector-emitter voltage (Vceo) of 140V and a continuous collector current (Ic) of 10A. The device can dissipate up to 80W of power, making it suitable for moderate-power circuits.
Electrical characteristics include a minimum DC current gain (hFE) of 90 at Ic=3A and Vce=4V, and a maximum collector-emitter saturation voltage (Vce(sat)) of 500mV at Ib=500mA and Ic=5A. The transition frequency (ft) is 30 MHz, indicating capability for moderate-speed switching.
The transistor is supplied in a TO-3PF (TO-3P Full Pack) through-hole package, which provides a fully insulated case for easy mounting without an additional insulator. The operating junction temperature range extends to 150°C.
| Qty | Low | High |
|---|---|---|
| 154+ | $1.95 | $1.95 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) is 140V.
The maximum continuous collector current (Ic) is 10A.
It comes in a TO-3PF (TO-3P Full Pack) through-hole package.
The power dissipation (Pd) is 80W.
The minimum DC current gain (hFE) is 90, tested at Ic=3A and Vce=4V.
The transition frequency (ft) is 30 MHz.
The maximum operating junction temperature (Tj) is 150°C.