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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,384 pcs
|
1384 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FJAF4210OTU is a PNP bipolar junction transistor manufactured by ON Semiconductor. It features a collector-emitter breakdown voltage (Vceo) of 140V and a continuous collector current (Ic) rating of 10A, making it suitable for medium-power switching and amplification applications.
Electrical characteristics include a minimum DC current gain (hFE) of 70 at Ic=3A and Vce=4V, and a collector-emitter saturation voltage (Vce(sat)) of 500mV maximum at Ib=500mA and Ic=5A. The transition frequency (ft) is 30MHz. Maximum power dissipation is 80W, and the maximum operating junction temperature is 150°C.
The device is supplied in a TO-3P-3 Full Pack (TO-3PF) through-hole package, which provides good thermal performance and electrical isolation. The mounting type is through hole.
| Qty | Low | High |
|---|---|---|
| 720+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (Vceo) is 140V.
The maximum continuous collector current (Ic) is 10A.
It uses a TO-3P-3 Full Pack (TO-3PF) through-hole package.
The maximum power dissipation (Pd) is 80W.
The maximum operating junction temperature is 150°C.
The minimum DC current gain (hFE) is 70 at Ic=3A and Vce=4V.
The transition frequency (ft) is 30MHz.