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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
285 pcs
|
285 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FJA4313OTU is an NPN bipolar junction transistor manufactured by ON Semiconductor. It is designed for high-voltage, high-current switching and amplification applications. Key electrical specifications include a collector-emitter breakdown voltage (Vceo) of 250V, a continuous collector current (Ic) of 17A, and a power dissipation of 130W. The transistor offers a DC current gain (hFE) of minimum 35 at 7A collector current and 5V Vce, and a transition frequency (ft) of 30MHz. The collector-emitter saturation voltage is typically 3V maximum at 800mA base current and 8A collector current. The device is housed in a TO-3PN through-hole package (also known as TO-3P-3 or SC-65-3), which provides efficient thermal management for high-power operation. The maximum junction temperature is 150°C. This transistor is suitable for use in power supply circuits, motor control, and other high-power switching applications.
| Qty | Low | High |
|---|---|---|
| 285+ | $4.19 | $4.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
250V.
17A.
130W.
TO-3PN (also TO-3P-3, SC-65-3) through-hole.
150°C.
RoHS3 Compliant (unverified).
Minimum 35 at Ic=7A, Vce=5V.