FJA4310OTU FJA4310OTU is an NPN bipolar junction transistor from onsemi. It features a 140V collector-emitter breakdown voltage, 10A collector current, and 100W power dissipation in a TO-3P package.
Mfr Part #:

FJA4310OTU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FJA4310OTU is an NPN bipolar junction transistor from onsemi. It features a 140V collector-emitter breakdown voltage, 10A collector current, and 100W power dissipation in a TO-3P package.
Total Stock: 345 pcs
$ Price Range: $1.51

FJA4310OTU Available from 1 distributor

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FJA4310OTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

FJA4310OTU Description

Short technical summary and product information.

The FJA4310OTU is a single NPN bipolar junction transistor (BJT) manufactured by onsemi, designed for power switching and amplification applications. It is housed in a through-hole TO-3P package (also referenced as SC-65-3) and is rated for a collector-emitter breakdown voltage of at least 140 V and a continuous collector current up to 10 A. The device can dissipate up to 100 W, making it suitable for power circuits with appropriate thermal management.

 

This transistor offers a DC current gain (hFE) of minimum 70 when operated at Ic = 3 A and Vce = 4 V. The collector-emitter saturation voltage is specified at a maximum of 500 mV under test conditions of Ib = 500 mA and Ic = 5 A, allowing efficient low-voltage switching. The transition frequency (ft) is typically 30 MHz, and the maximum junction operating temperature is 150°C.

 

With its through-hole mounting and TO-3P package, the FJA4310OTU is appropriate for power supply control, motor drive stages, and general-purpose power switching circuits where PCB-level heat sinking can be applied.

FJA4310OTU Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: NPN Bipolar Junction Transistor (BJT), 140V, 10A
Subcategory: Single

FJA4310OTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FJA4310OTU Estimated Pricing

Qty Low High
345+ $1.51 $1.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

FJA4310OTU Features

  • NPN bipolar transistor for 140V operation.
  • 10A collector current capability.
  • 100W power dissipation rated.
  • Through-hole TO-3P package.
  • 30MHz typical transition frequency.

FJA4310OTU Applications

  • Power switching in motor drive circuits.
  • Power supply and converter designs.
  • Audio amplifier output stages.
  • General-purpose power amplification.

FJA4310OTU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the FJA4310OTU?

The minimum collector-emitter breakdown voltage (Vceo) is 140 V.

What package is the FJA4310OTU available in?

It is available in a through-hole TO-3P-3 / SC-65-3 package, with supplier device package TO-3P.

What is the maximum operating junction temperature?

The maximum junction operating temperature is 150°C.

Is the FJA4310OTU RoHS compliant?

Yes, it is listed as RoHS3 compliant in the existing data, though this compliance status is unverified.

What is the maximum collector current of the FJA4310OTU?

The maximum collector current (Ic) is 10 A.

How much power can the FJA4310OTU dissipate?

The maximum power dissipation is 100 W.

What is the DC current gain (hFE) of the FJA4310OTU?

The minimum hFE is 70 at Ic=3A and Vce=4V.

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