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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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345 pcs
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345 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Medical Grade | |
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| Operating Temperature | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FJA4310OTU is a single NPN bipolar junction transistor (BJT) manufactured by onsemi, designed for power switching and amplification applications. It is housed in a through-hole TO-3P package (also referenced as SC-65-3) and is rated for a collector-emitter breakdown voltage of at least 140 V and a continuous collector current up to 10 A. The device can dissipate up to 100 W, making it suitable for power circuits with appropriate thermal management.
This transistor offers a DC current gain (hFE) of minimum 70 when operated at Ic = 3 A and Vce = 4 V. The collector-emitter saturation voltage is specified at a maximum of 500 mV under test conditions of Ib = 500 mA and Ic = 5 A, allowing efficient low-voltage switching. The transition frequency (ft) is typically 30 MHz, and the maximum junction operating temperature is 150°C.
With its through-hole mounting and TO-3P package, the FJA4310OTU is appropriate for power supply control, motor drive stages, and general-purpose power switching circuits where PCB-level heat sinking can be applied.
| Qty | Low | High |
|---|---|---|
| 345+ | $1.51 | $1.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage (Vceo) is 140 V.
It is available in a through-hole TO-3P-3 / SC-65-3 package, with supplier device package TO-3P.
The maximum junction operating temperature is 150°C.
Yes, it is listed as RoHS3 compliant in the existing data, though this compliance status is unverified.
The maximum collector current (Ic) is 10 A.
The maximum power dissipation is 100 W.
The minimum hFE is 70 at Ic=3A and Vce=4V.