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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
900 pcs
|
900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FJA4213RTU is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for high-power switching and amplification applications requiring a maximum collector-emitter voltage of 250V and a continuous collector current rating of 17A.
Key electrical characteristics include a minimum DC current gain (hFE) of 55 at 1A collector current and 5V collector-emitter voltage, and a maximum collector-emitter saturation voltage of 3V at 800mA base current and 8A collector current. The device has a transition frequency of 30 MHz, making it suitable for moderate-speed switching circuits.
The transistor is housed in a through-hole TO-3P-3 package (also known as SC-65-3), which provides robust thermal performance. It can dissipate up to 130W of power and has a maximum junction temperature rating of 150°C.
| Qty | Low | High |
|---|---|---|
| 450+ | $1.80 | $1.80 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) is 250V.
The maximum collector current (Ic) is 17A.
The maximum power dissipation (Pd) is 130W.
It uses a through-hole TO-3P-3 (SC-65-3) package.
The maximum junction temperature (TJ) is 150°C.
The minimum DC current gain (hFE) is 55 at Ic=1A, Vce=5V.
The part is listed as RoHS3 Compliant, but this is unverified and should be confirmed with the manufacturer.