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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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154 pcs
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154 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Medical Grade | |
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| Operating Temperature | |
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| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FJA4213OTU is a PNP bipolar junction transistor manufactured by ON Semiconductor. It is designed for through-hole mounting and comes in a TO-3P-3, SC-65-3 package with a supplier device package of TO-3P.
Key electrical specifications include a minimum collector-emitter breakdown voltage of 250V, a maximum continuous collector current of 17A, and a maximum power dissipation of 130W. The DC current gain (hFE) is at least 55 at 1A collector current and 5V Vce. The maximum Vce saturation voltage is 3V at 800mA base current and 8A collector current. The typical transition frequency is 30MHz.
The device operates with a maximum junction temperature of 150°C. It is listed as RoHS3 compliant, MSL 1 unlimited, and REACH unaffected, though these compliance claims are unverified.
The minimum collector-emitter breakdown voltage is 250V.
It is available in TO-3P-3, SC-65-3 package with through-hole mounting; the supplier device package is TO-3P.
The maximum junction temperature is 150°C.
It is listed as RoHS3 compliant, but this claim is unverified and low confidence.
The maximum continuous collector current is 17A.
The minimum hFE is 55 at 1A collector current and 5V Vce.
The typical transition frequency is 30MHz.