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FJA4210OTU PNP epitaxial silicon transistor with 140V collector-emitter voltage and 10A current capability in a TO-3P through-hole package.
Mfr Part #:

FJA4210OTU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP epitaxial silicon transistor with 140V collector-emitter voltage and 10A current capability in a TO-3P through-hole package.
✓ Total Stock: 370 pcs
$ Price Range: $1.11

FJA4210OTU Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
370 pcs
On Request
370 pcs On Request 1 On Request On Request On Request On Request On Request
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FJA4210OTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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FJA4210OTU Description

Short technical summary and product information.

The FJA4210OTU is a PNP epitaxial silicon bipolar junction transistor manufactured by ON Semiconductor (formerly Fairchild). It is designed for high-power audio amplifier output stages and other linear applications requiring high current and voltage capability.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of -140V, collector current (IC) of -10A, and a collector dissipation of 100W at case temperature 25°C. The device offers a DC current gain (hFE) of 70 minimum at 3A/4V, with a typical gain-bandwidth product of 30MHz. Output capacitance is 400pF typical.

 

The transistor is housed in a TO-3P-3 (SC-65-3) through-hole package, providing excellent thermal performance. It operates over a junction temperature range up to 150°C and can be stored from -55°C to 150°C. The FJA4210OTU is the complementary NPN to the FJA4310, enabling push-pull amplifier designs.

FJA4210OTU Quick Information

Product Type: Bipolar Junction Transistor (BJT) - Single
Series: FJA4210
Canonical Name: FJA4210OTU - On Semiconductor PNP Transistor 140V 10A TO-3P
Subcategory: PNP Transistor

FJA4210OTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FJA4210OTU Estimated Pricing

Qty Low High
370+ $1.11 $1.11

Estimated market price range - modelled values for guidance only, not live distributor offers.

FJA4210OTU Features

  • PNP epitaxial silicon transistor construction.
  • 140V collector-emitter voltage rating.
  • 10A continuous collector current capability.
  • 100W power dissipation at 25°C case temperature.
  • TO-3P through-hole package for easy mounting.

FJA4210OTU Applications

  • Audio power amplifier output stages.
  • High-current linear regulator circuits.
  • Push-pull amplifier complementary pairs.
  • General high-voltage switching applications.

FJA4210OTU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the FJA4210OTU?

The maximum collector-emitter voltage (VCEO) is -140V.

What is the maximum collector current rating?

The maximum DC collector current (IC) is -10A.

What package is the FJA4210OTU available in?

It is available in a TO-3P-3 (SC-65-3) through-hole package. The supplier device package is TO-3P.

What is the operating junction temperature range?

The maximum junction temperature is 150°C. Storage temperature range is -55°C to 150°C.

Is the FJA4210OTU RoHS compliant?

RoHS compliance is listed as RoHS3 compliant, but this is unverified and has low confidence.

What is the DC current gain (hFE) of this transistor?

The minimum DC current gain is 70 at IC=-3A, VCE=-4V. Typical hFE for the 'O' classification is 100.

What is the collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage is -0.5V at IC=-5A, IB=-0.5A.

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