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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-to-Emitter Voltage (Vces) | |
| Current | |
| Gate Charge | |
| Gate-to-Emitter Voltage (VGES) | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The FGY75T95SQDT is a 950V 75A Trench Field Stop IGBT from ON Semiconductor. It utilizes advanced Trench Field Stop technology to achieve low saturation voltage (1.69V typical at 75A) and fast switching performance. The device is co-packaged with a full current rated diode.
Key specifications include a collector to emitter voltage of 950V, gate to emitter voltage of ±30V (transient), and a maximum junction temperature of 175°C. The device is capable of handling high pulsed collector currents up to 300A.
The FGY75T95SQDT is designed for applications such as solar inverters, power factor correction (PFC) circuits, and DC/DC converters. It is Pb-free and RoHS compliant. The device is offered in a TO-247-3LD package.
The collector to emitter voltage (Vces) is rated at 950V.
The continuous collector current is 75A at TC=100°C and 150A at TC=25°C.
The typical saturation voltage (Vcesat) is 1.69V at IC=75A.
The maximum junction temperature is 175°C.
Yes, the device is Pb-free and RoHS compliant.