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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
27,500 pcs
|
27500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,540 pcs
|
1540 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Diode Type | |
| Gate Charge | |
| Gate-Emitter Voltage (Maximum) | |
| Gate-Emitter Voltage (Transient Maximum) | |
| IC (Maximum @ TC=100 °C) | |
| IF (Maximum @ TC=100 °C) | |
| IF (Maximum @ TC=25 °C) | |
| IGBT Type | |
| Input Type | |
| Lead Count | |
| Mounting Type | |
| Operating Temperature | |
| PD (Maximum @ TC=100 °C) | |
| Power | |
| Pulsed Collector Current | |
| Pulsed Diode Forward Current | |
| Reverse Recovery Time (trr) | |
| Storage Temperature | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Switching Energy | |
| Switching Energy (Eoff) | |
| Td (on | |
| Termination Style | |
| Test Condition | |
| Thermal Resistance Junction-to-Ambient | |
| Thermal Resistance Junction-to-Case (Diode) | |
| Thermal Resistance Junction-to-Case (IGBT) | |
| Turn-Off Delay Time | |
| Vce(on) (Max) @ Vge, Ic | |
| Vce(on) @ Vge=15V, Ic=75A | |
| Voltage |
The FGY75T120SQDN is an Ultra Field Stop IGBT manufactured by On Semiconductor. It features a maximum collector-emitter voltage of 1200V and a collector current rating of 150A at 25°C (75A at 100°C). The device incorporates a soft fast reverse recovery diode, making it suitable for applications requiring efficient switching with low losses.
With a typical saturation voltage of 1.7V at 75A and low switching energy (Eon=6.25mJ, Eoff=1.96mJ), this IGBT is optimized for high-speed switching. The maximum junction temperature is 175°C, and the device is capable of handling up to 300A pulsed collector current.
The IGBT is housed in a TO-247-3 package with through-hole mounting, providing robust thermal performance. The junction-to-case thermal resistance is 0.19°C/W (IGBT) and 0.38°C/W (diode). This component is RoHS compliant and suitable for applications such as solar inverters and UPS systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $11.66 | $11.66 |
| 30+ | $6.99 | $6.99 |
| 120+ | $5.97 | $5.97 |
| 510+ | $5.63 | $5.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCES) is 1200 V.
The device is available in a TO-247-3 through-hole package.
The junction temperature range is -55°C to 175°C.
Yes, the datasheet states it is RoHS compliant.
The collector current (IC) at TC=25°C is 150 A maximum.
The typical saturation voltage VCE(sat) is 1.7 V at VGE=15V, IC=75A.
Yes, it incorporates a soft fast reverse recovery diode.