FGY100T65SCDT

The FGY100T65SCDT is a Trench Field Stop IGBT from onsemi designed for high-power switching applications including solar inverters, UPS systems, motor control, energy storage systems (ESS), and HVAC equipment. It is rated for a maximum collector-to-emitter voltage of 650 V and a continuous collector current of 200 A at Tc=25°C, derated to 100 A at Tc=100°C. Pulsed collector current capability is 300 A.

Key electrical specifications include a typical gate charge of 157 nC, typical switching energies of 5.4 mJ turn-on and 3.8 mJ turn-off (at 400 V, 100 A, RG=4.7 Ω, VGE=15 V), and a maximum saturation voltage of 1.9 V at VGE=15 V and IC=100 A. The device is short-circuit rated for 5 µs at Tc=150°C, and the built-in diode has a typical reverse recovery time of 62 ns.

The TO-247-3 package supports through-hole mounting and efficient heat sinking. Maximum power dissipation is 750 W at Tc=25°C (375 W at Tc=100°C), and the maximum junction temperature is 175°C. Thermal resistance junction-to-case is 0.2 °C/W for the IGBT and 0.3 °C/W for the diode, enabling effective thermal management in demanding power converter designs.