FGS15N40LTF FGS15N40LTF is a 400V N-channel IGBT with 130A peak current capability, designed for strobe applications. It features a trench gate structure for superior performance.
Mfr Part #:

FGS15N40LTF

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FGS15N40LTF is a 400V N-channel IGBT with 130A peak current capability, designed for strobe applications. It features a trench gate structure for superior performance.
Total Stock: 102,000 pcs
$ Price Range: $0.41 - $0.44

FGS15N40LTF Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
102,000 pcs
102000 pcs On Request 1 On Request On Request 04+ On Request On Request

FGS15N40LTF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Cut-Off Current (ICES)
Collector-Emitter Breakdown Voltage (BVCES)
Current
Fall Time (tf)
Gate-Emitter Leakage Current (IGES)
Gate-Emitter Threshold Voltage (Vge(th))
Gate-Emitter Voltage (VGES)
IGBT Type
Input Capacitance (Cies)
Input Type
Lead Temperature for Soldering
Mounting Type
Operating Temperature
Output Capacitance (Coes)
Power
Reverse Transfer Capacitance (Cres)
Rise Time (tr)
Storage Temperature
Storage Temperature (Tstg)
Supplier Device Package
Thermal Resistance Junction to Ambient (RθJA)
Turn-Off Delay Time (td(off))
Turn-On Delay Time (td(on))
Vce(on) (Max) @ Vge, Ic
Voltage

FGS15N40LTF Description

Short technical summary and product information.

The FGS15N40LTF is a trench-gate N-channel IGBT designed for high peak current applications such as strobe flash circuits. It offers a collector-emitter voltage rating of 400V and a pulsed collector current of 130A, with a saturation voltage ranging from 2.0V to 8.0V at 4V gate drive.

 

Electrical characteristics include a gate-emitter threshold voltage of 1.4V max, input capacitance of 3800pF, and switching speeds with turn-on delay of 0.15µs, rise time of 1.5µs, turn-off delay of 0.15µs/0.3µs, and fall time of 1.5µs/3.0µs. The device requires a minimum gate resistor of 15Ω.

 

The IGBT is housed in a surface-mount 8-SOIC package with a maximum power dissipation of 2W at 25°C ambient when mounted on a PCB. It operates over a junction temperature range of -40°C to 150°C and has a storage temperature range of -40°C to 150°C. The lead temperature for soldering is 300°C for 5 seconds.

FGS15N40LTF Quick Information

Product Type: IGBT
Canonical Name: FGS15N40LTF IGBT, 400V, N-Channel, Surface Mount
Subcategory: Single IGBT

FGS15N40LTF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 - Unlimited
REACH Status: REACH Unaffected

FGS15N40LTF Estimated Pricing

Qty Low High
3,000+ $0.44 $0.44
6,000+ $0.41 $0.41
9,000+ $0.41 $0.41

Estimated market price range - modelled values for guidance only, not live distributor offers.

FGS15N40LTF Features

  • 400V collector-emitter voltage rating.
  • 130A peak pulsed collector current.
  • Trench gate structure for high efficiency.
  • Surface mount 8-SOIC package.
  • Operating temperature range -40°C to 150°C.

FGS15N40LTF Applications

  • Designed for strobe flash applications.
  • Suitable for high peak current switching circuits.
  • Use in power management and motor control circuits.

FGS15N40LTF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the FGS15N40LTF?

The collector-emitter voltage rating (Vces) is 400V.

What is the peak pulsed collector current?

The pulsed collector current (Icm) is 130A, pulse width limited by junction temperature.

What package type is the FGS15N40LTF available in?

It comes in a surface mount 8-SOIC (0.154", 3.90mm Width) package.

What is the operating temperature range?

The operating junction temperature range is -40°C to 150°C.

Is the FGS15N40LTF RoHS compliant?

The datasheet indicates RoHS3 compliance, but this status is unverified.

What are the switching speed characteristics?

Turn-on delay time is 0.15µs, rise time is 1.5µs, turn-off delay time is 0.15µs (typ) / 0.3µs (max), and fall time is 1.5µs (typ) / 3.0µs (max) under test conditions VCC=300V, IC=130A, VGE=4V, RG=15Ω, resistive load.

What is the collector-emitter saturation voltage?

The saturation voltage (VCE(sat)) is 2.0V min, 4.5V typical, and 8.0V max at IC=130A and VGE=4V.

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