| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,100 pcs
|
2100 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Td (on | |
| Test Condition | |
| Turn-Off Delay Time | |
| Vce(on) (Max) @ Vge, Ic |
The FGPF4533RDTU from On Semiconductor is a Trench Field Stop IGBT designed for high-current switching applications. It features a nominal collector current rating of 200 A and a maximum collector-emitter saturation voltage of 1.8 V at Vge = 15 V and Ic = 50 A.
With a gate charge of 44 nC, the device offers fast switching performance. Typical turn-on delay time is 6 ns and turn-off delay time is 40 ns under test conditions of 200 V, 20 A, 5 Ohm gate resistance, and 15 V gate drive.
The IGBT is housed in a TO-220-3 Full Pack (supplier package TO-220F-3) with through-hole mounting, suitable for power circuit board assembly. Its operating junction temperature range is -55°C to 150°C.
The nominal collector current rating is 200 A.
The maximum collector-emitter saturation voltage is 1.8 V at Vge = 15 V and Ic = 50 A.
It is housed in a TO-220-3 Full Pack package, also referred to as TO-220F-3, with through-hole mounting.
The junction temperature range is -55°C to 150°C.
The gate charge (Qg) is 44 nC.
Typical turn-on delay time is 6 ns and turn-off delay time is 40 ns at 200 V, 20 A, 5 Ohm gate resistance, and 15 V gate drive.