| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,700 pcs
|
2700 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Power | |
| Supplier Device Package | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The FGPF4533 is a single Trench IGBT from On Semiconductor designed for high-power switching applications. It offers a maximum collector-emitter voltage of 330 V and a maximum collector current of 200 A. The saturation voltage is typically 1.8 V at Vge=15 V and Ic=50 A, enabling efficient conduction. The gate charge is 44 nC typical, facilitating fast switching. The device uses Trench technology and standard input logic. Maximum power dissipation is 28.4 W. The IGBT is packaged in a TO-220-3 Full Pack (TO-220F-3) with through-hole mounting, suitable for robust thermal management. Compliance includes RoHS3, MSL 1, and REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 242+ | $1.24 | $1.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
330 V.
200 A.
1.8V at Vge=15V, Ic=50A.
44 nC typical.
TO-220-3 Full Pack (TO-220F-3).
Yes, RoHS3 Compliant.
28.4 W maximum.