| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,568 pcs
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2568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gate Charge | |
| IGBT Type | |
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| Medical Grade | |
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| Supplier Device Package | |
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| Td (on | |
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| Vce(on) (Max) @ Vge, Ic | |
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The FGP20N60UFDTU is a Field Stop IGBT manufactured by On Semiconductor, designed for high-efficiency power switching applications. It is rated for a collector-emitter breakdown voltage of 600V, a continuous collector current of 40A, and a power dissipation of 165W. The device utilizes Field Stop technology to achieve low on-state voltage drop and fast switching performance.
Switching characteristics include a turn-on delay time of 13ns and turn-off delay of 87ns under test conditions of 400V, 20A, 10Ω, and 15V gate drive. The switching energy is 380µJ (on) and 260µJ (off). The gate charge is 63nC, and the maximum collector-emitter saturation voltage is 2.4V at 15V, 20A. The integrated diode has a reverse recovery time of 35ns.
The FGP20N60UFDTU is housed in a through-hole TO-220-3 package, suitable for PCB mounting. It operates over a junction temperature range of -55°C to 150°C. The component is RoHS3 compliant, with MSL Level 1 (unlimited) and REACH unaffected status, making it suitable for environmentally sensitive designs.
The collector-emitter breakdown voltage is 600V.
It is available in a TO-220-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
Yes, it is listed as RoHS3 compliant.
The gate charge is 63 nC.
The maximum Vce(sat) is 2.4V at 15V gate voltage and 20A collector current.
The switching energy is 380 µJ (on) and 260 µJ (off) at 400V, 20A, 10Ω, 15V.