FGP20N60UFDTU FGP20N60UFDTU is a 600V, 40A Field Stop IGBT from On Semiconductor. It features a low Vce(sat) of 2.4V and fast switching in a TO-220-3 package.
Mfr Part #:

FGP20N60UFDTU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FGP20N60UFDTU is a 600V, 40A Field Stop IGBT from On Semiconductor. It features a low Vce(sat) of 2.4V and fast switching in a TO-220-3 package.
✓ Total Stock: 2,568 pcs

FGP20N60UFDTU Available from 1 distributor

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FGP20N60UFDTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Medical Grade
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Storage Temperature
Supplier Device Package
Switching Energy
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

FGP20N60UFDTU Description

Short technical summary and product information.

The FGP20N60UFDTU is a Field Stop IGBT manufactured by On Semiconductor, designed for high-efficiency power switching applications. It is rated for a collector-emitter breakdown voltage of 600V, a continuous collector current of 40A, and a power dissipation of 165W. The device utilizes Field Stop technology to achieve low on-state voltage drop and fast switching performance.

 

Switching characteristics include a turn-on delay time of 13ns and turn-off delay of 87ns under test conditions of 400V, 20A, 10Ω, and 15V gate drive. The switching energy is 380µJ (on) and 260µJ (off). The gate charge is 63nC, and the maximum collector-emitter saturation voltage is 2.4V at 15V, 20A. The integrated diode has a reverse recovery time of 35ns.

 

The FGP20N60UFDTU is housed in a through-hole TO-220-3 package, suitable for PCB mounting. It operates over a junction temperature range of -55°C to 150°C. The component is RoHS3 compliant, with MSL Level 1 (unlimited) and REACH unaffected status, making it suitable for environmentally sensitive designs.

FGP20N60UFDTU Quick Information

Product Type: IGBT (Insulated Gate Bipolar Transistor)
Canonical Name: FGP20N60UFDTU - IGBT, Field Stop, 600V, 40A, TO-220-3
Subcategory: Single IGBT

FGP20N60UFDTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FGP20N60UFDTU Features

  • Field Stop IGBT technology for efficiency.
  • Rated for 600V collector-emitter voltage.
  • Continuous collector current of 40A.
  • Low Vce(sat) of 2.4V typical.
  • Fast switching with 13ns/87ns delays.

FGP20N60UFDTU Applications

  • Ideal for power supply inverters.
  • Used in motor drive circuits.
  • Suitable for UPS systems.
  • Applicable in induction heating.

FGP20N60UFDTU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of this IGBT?

The collector-emitter breakdown voltage is 600V.

What package does the FGP20N60UFDTU come in?

It is available in a TO-220-3 through-hole package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is this component RoHS compliant?

Yes, it is listed as RoHS3 compliant.

What is the gate charge of this IGBT?

The gate charge is 63 nC.

What is the maximum collector-emitter saturation voltage?

The maximum Vce(sat) is 2.4V at 15V gate voltage and 20A collector current.

What is the switching energy of this IGBT?

The switching energy is 380 µJ (on) and 260 µJ (off) at 400V, 20A, 10Ω, 15V.

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