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FGP10N60UNDF FGP10N60UNDF is an NPT IGBT rated for 600V collector-emitter voltage and 20A collector current. Housed in a through-hole TO-220-3 package.
Mfr Part #:

FGP10N60UNDF

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FGP10N60UNDF is an NPT IGBT rated for 600V collector-emitter voltage and 20A collector current. Housed in a through-hole TO-220-3 package.
Total Stock: 6,800 pcs
$ Price Range: $1.38

FGP10N60UNDF Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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6,800 pcs
6800 pcs On Request 1 On Request On Request On Request On Request On Request

FGP10N60UNDF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Medical Grade
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Storage Temperature
Supplier Device Package
Switching Energy
Switching Energy (off)
Td (on
Test Condition
Turn-Off Delay Time (td(off))
Vce(on) (Max) @ Vge, Ic
Voltage

FGP10N60UNDF Description

Short technical summary and product information.

The FGP10N60UNDF is an NPT (Non-Punch Through) IGBT from ON Semiconductor, designed for high-speed switching applications. It features a collector-emitter voltage of 600V and a continuous collector current of 20A, with a power dissipation of 139W. The device has a typical collector-emitter saturation voltage of 2.45V at 15V gate voltage and 10A collector current. Switching characteristics include turn-on delay of 8ns, turn-off delay of 52.2ns, and switching energies of 150µJ (on) and 50µJ (off) under test conditions of 400V, 10A, 10Ω, and 15V. The gate charge is 37nC. The part includes an integrated fast recovery diode with a reverse recovery time of 37.7ns. The IGBT is housed in a standard TO-220-3 package, through-hole mounting, suitable for a wide operating temperature range of -55°C to 150°C. Typical applications include motor drives, power supplies, and induction heating.

FGP10N60UNDF Quick Information

Product Type: Single IGBT
Canonical Name: FGP10N60UNDF - IGBT NPT 600V 20A
Subcategory: NPT

FGP10N60UNDF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FGP10N60UNDF Estimated Pricing

Qty Low High
218+ $1.38 $1.38

Estimated market price range - modelled values for guidance only, not live distributor offers.

FGP10N60UNDF Features

  • NPT (Non-Punch Through) IGBT technology.
  • Rated for 600V collector-emitter voltage.
  • Continuous collector current of 20A.
  • Low saturation voltage of 2.45V.
  • Fast switching with 8ns turn-on delay.

FGP10N60UNDF Applications

  • Suitable for motor drive inverters.
  • Used in switch-mode power supplies.
  • Ideal for induction heating applications.
  • Can be used in UPS systems.

FGP10N60UNDF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the FGP10N60UNDF?

The collector-emitter voltage (Vces) is 600V.

What is the collector current rating?

The continuous collector current (Ic) is 20A.

What is the package type of the FGP10N60UNDF?

The package is TO-220-3 with through-hole mounting.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (junction).

Is the FGP10N60UNDF RoHS compliant?

It is listed as RoHS3 compliant, but this is unverified and should be confirmed with the manufacturer.

What is the collector-emitter saturation voltage?

The typical saturation voltage is 2.45V at Vge=15V and Ic=10A.

What are the switching energy losses?

Turn-on switching energy is 150µJ and turn-off is 50µJ under test conditions of 400V, 10A, 10Ω, 15V.

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