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FGL60N100BNTDTU FGL60N100BNTDTU is a 1000V, 60A NPT and Trench IGBT from ON Semiconductor. It features a 180W power dissipation and is housed in a TO-264-3 package.
Mfr Part #:

FGL60N100BNTDTU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FGL60N100BNTDTU is a 1000V, 60A NPT and Trench IGBT from ON Semiconductor. It features a 180W power dissipation and is housed in a TO-264-3 package.
Total Stock: 2,505 pcs

FGL60N100BNTDTU Available from 1 distributor

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FGL60N100BNTDTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Medical Grade
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Storage Temperature
Supplier Device Package
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

FGL60N100BNTDTU Description

Short technical summary and product information.

The FGL60N100BNTDTU is a single NPT and Trench IGBT designed for high-voltage switching applications. It offers a collector-emitter voltage rating of 1000V and a continuous collector current of 60A, with a maximum power dissipation of 180W.

 

Key electrical characteristics include a typical gate charge of 275 nC and a collector-emitter saturation voltage of 2.9V at 15V gate drive and 60A collector current. The device provides switching delay times of 140ns turn-on and 630ns turn-off, with a reverse recovery time of 1.2 µs.

 

The IGBT is packaged in a through-hole TO-264-3 (TO-264AA) case, suitable for robust mounting in power electronics assemblies. It operates over a junction temperature range of -55°C to 150°C.

FGL60N100BNTDTU Quick Information

Product Type: IGBT
Series: FGL60N100BNTD
Canonical Name: FGL60N100BNTDTU NPT and Trench IGBT
Subcategory: Single IGBT

FGL60N100BNTDTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FGL60N100BNTDTU Features

  • Rated for 1000V collector-emitter voltage.
  • Supports 60A continuous collector current.
  • Dissipates up to 180W of power.
  • NPT and Trench IGBT technology.
  • Housed in a TO-264-3 through-hole package.

FGL60N100BNTDTU Applications

  • Used in high-voltage power switching circuits.
  • Suitable for motor drive inverters.
  • Ideal for uninterruptible power supplies.
  • Applicable in induction heating systems.
  • Used in welding equipment power stages.

FGL60N100BNTDTU FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the FGL60N100BNTDTU?

The collector-emitter voltage (Vces) is 1000 V.

What is the maximum collector current for this IGBT?

The maximum collector current (Ic) is 60 A.

What is the power dissipation of the FGL60N100BNTDTU?

The power dissipation (Ptot) is 180 W.

What is the operating temperature range for this device?

The operating junction temperature range is -55°C to 150°C.

What package type does the FGL60N100BNTDTU use?

It uses a through-hole TO-264-3 (TO-264AA) package.

Is the FGL60N100BNTDTU RoHS compliant?

The part is listed as RoHS3 Compliant, but this is unverified.

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