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FGL60N100BNTD

The On Semiconductor FGL60N100BNTD is an NPT-Trench IGBT designed for high-speed switching applications. It offers a 1000V collector-emitter voltage and 60A collector current.

✓ Total Stock: 1,478 pcs

$ Price Range: $4.16

FGL60N100BNTD Available from 2 distributors

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	1,468 pcs On Request	1468 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	10 pcs On Request	10 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FGL60N100BNTD Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	On Semiconductor
Input Capacitance	6000 pF
Mounting Type	Through Hole

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FGL60N100BNTD Description

Short technical summary and product information.

The FGL60N100BNTD from On Semiconductor is an NPT-Trench Insulated Gate Bipolar Transistor (IGBT) featuring outstanding conduction and switching characteristics. It is well-suited for Induction Heating (I-H) applications.

Key electrical specifications include a high Collector-Emitter Voltage (VCES) of 1000V and a continuous Collector Current (IC) of 60A at 25°C, derating to 42A at 100°C. The device exhibits a low saturation voltage (VCE(sat)) of 2.5V at IC = 60A and VGE = 15V, along with a built-in fast recovery diode.

Dynamic characteristics are also notable, with a typical Turn-On Delay Time (td(on)) of 140ns and a Fall Time (tf) between 130ns and 250ns. The IGBT has a typical Input Capacitance (Cies) of 6000pF.

Packaged in a TO-264 through-hole configuration, this IGBT operates within a junction temperature range of -55 to +150°C. Its thermal resistance from junction to case is 0.69°C/W.

FGL60N100BNTD Quick Information

Product Type: IGBT Transistor

Series: FGL60N100BNTD

Canonical Name: NPT-Trench IGBT

Subcategory: NPT-Trench IGBT

FGL60N100BNTD Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FGL60N100BNTD Estimated Pricing

Qty	Low	High
1+	$4.16	$4.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

FGL60N100BNTD Features

High speed switching IGBT transistor.
1000V collector-emitter voltage rating.
60A continuous collector current.
Low saturation voltage VCE(sat).
Built-in fast recovery diode.

FGL60N100BNTD Applications

Used in motor drive inverters and UPS systems.
Suitable for induction heating and welding applications.
Ideal for high-power switch-mode power supplies.
Employed in renewable energy inverters.
Useful for power factor correction circuits.

FGL60N100BNTD FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage of the FGL60N100BNTD?

1000 V.

What is the continuous collector current rating of the FGL60N100BNTD?

60 A at 25°C case temperature, derated to 42 A at 100°C.

What is the package type of the FGL60N100BNTD?

TO-264.

What is the operating junction temperature range?

-55 to +150 °C.

What is the gate threshold voltage of the FGL60N100BNTD?

4.0 to 7.0 V at IC = 60 mA, VCE = VGE.

What is the thermal resistance junction-to-case for the IGBT?

0.69 °C/W.

What are the typical switching times for the FGL60N100BNTD?

Turn-on delay 140 ns, rise time 320 ns, turn-off delay 630 ns, fall time 130 to 250 ns under VCC = 600 V, IC = 60 A, RG = 51 Ω, VGE = 15 V, resistive load at 25°C.