| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,015 pcs
|
2015 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Medical Grade | |
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| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The FGL12040WD is a single Trench Field Stop IGBT manufactured by On Semiconductor. It features a collector-emitter voltage (Vce) of 1200V and a continuous collector current (Ic) of 80A, with a maximum power dissipation of 391W. The device offers a typical turn-on delay time of 45 ns and turn-off delay time of 560 ns, with a typical switching energy of 4.1 mJ (on) and 1 mJ (off) under test conditions of 600V, 40A, and 23 Ohm gate resistance. The collector-emitter saturation voltage (Vce(sat)) is typically 2.9V at Vge=15V and Ic=40A. The IGBT is housed in a TO-264-3 through-hole package, suitable for high-power applications requiring efficient switching and low conduction losses. The operating junction temperature range is -55°C to 150°C.
The maximum collector-emitter voltage (Vce) is 1200V.
The continuous collector current (Ic) is 80A.
The FGL12040WD is available in a TO-264-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
Typical switching energy is 4.1 mJ (turn-on) and 1 mJ (turn-off) at 600V, 40A, 23 Ohm gate resistance.