FGHL75T65MQD FGHL75T65MQD is a 650V, 75A Trench Field Stop IGBT from On Semiconductor in a TO-247-3 package. It features low saturation voltage and high current capability.
Mfr Part #:

FGHL75T65MQD

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FGHL75T65MQD is a 650V, 75A Trench Field Stop IGBT from On Semiconductor in a TO-247-3 package. It features low saturation voltage and high current capability.
✓ Total Stock: 1,595 pcs
$ Price Range: $3.04 - $7.30

FGHL75T65MQD Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,145 pcs
1145 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
450 pcs
450 pcs On Request 1 On Request On Request On Request On Request On Request

FGHL75T65MQD Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Lead Style
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

FGHL75T65MQD Description

Short technical summary and product information.

The FGHL75T65MQD is a 650V, 75A Field Stop Trench IGBT from On Semiconductor, designed for high efficiency power conversion applications. It utilizes advanced 4th generation mid-speed IGBT technology combined with a full current rated co-pack diode. Key electrical characteristics include a maximum collector-to-emitter voltage of 650 V, a continuous collector current of 80 A at TC=25°C (75 A at 100°C), and a typical saturation voltage of 1.45 V at IC=75 A. The device offers positive temperature coefficient for easy parallel operation and is capable of handling pulsed collector currents up to 300 A. The IGBT is housed in a TO-247-3 through-hole package (CASE 340CX) with long leads, suitable for robust mounting. It is RoHS compliant and has a wide operating junction temperature range of -55°C to +175°C, making it suitable for demanding industrial environments. Typical applications include solar inverters, UPS, ESS, PFC, and converters.

FGHL75T65MQD Quick Information

Product Type: IGBT (Insulated Gate Bipolar Transistor)
Canonical Name: FGHL75T65MQD 650V 75A Field Stop Trench IGBT
Subcategory: Single IGBT

FGHL75T65MQD Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FGHL75T65MQD Estimated Pricing

Qty Low High
1+ $7.30 $7.30
10+ $4.94 $4.94
450+ $3.06 $3.06
900+ $3.04 $3.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

FGHL75T65MQD Features

  • 650V collector-to-emitter voltage rating.
  • 75A continuous collector current at 100°C.
  • Low saturation voltage of 1.45V typical.
  • Trench Field Stop technology for efficiency.
  • TO-247-3 through-hole package with long leads.

FGHL75T65MQD Applications

  • Ideal for solar inverter power stages.
  • Used in UPS and energy storage systems.
  • Suitable for PFC and converter circuits.
  • Designed for high efficiency power conversion.

FGHL75T65MQD FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-to-emitter voltage of the FGHL75T65MQD?

The maximum collector-to-emitter voltage is 650 V.

What is the package type of the FGHL75T65MQD?

The package is TO-247-3 (through-hole).

What is the operating junction temperature range?

The operating junction temperature range is -55°C to +175°C.

Is the FGHL75T65MQD RoHS compliant?

Yes, it is RoHS3 compliant as stated in the datasheet.

What is the typical saturation voltage of the FGHL75T65MQD?

The typical collector-to-emitter saturation voltage is 1.45 V at VGE=15V and IC=75A.

What is the gate charge of the FGHL75T65MQD?

The typical gate charge is 145 nC.

What are the switching energies of the FGHL75T65MQD?

Typical turn-on energy is 1.94 mJ and turn-off energy is 1.55 mJ at 400V, 75A, 10 Ohm, 15V.

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