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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,145 pcs
|
1145 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
450 pcs
|
450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Case Code | |
| Collector Current (Maximum @ TC=100 °C) | |
| Collector Current (Maximum @ TC=25 °C) | |
| Current | |
| Diode Forward Current (Maximum @ TC=25 °C) | |
| Diode Forward Current (Maximum @ TC=65 °C) | |
| Gate Charge | |
| Gate-Emitter Voltage (Maximum @ Continuous) | |
| Gate-Emitter Voltage (Maximum @ Transient) | |
| IGBT Type | |
| Input Type | |
| Lead Style | |
| Maximum Lead Temperature for Soldering | |
| Mounting Type | |
| Non-Repetitive Forward Surge Current | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Maximum @ TC=100 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Pulsed Collector Current | |
| Reverse Recovery Time (trr) | |
| Standard Package Qty | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Thermal Resistance Junction To Case (Maximum @ Diode) | |
| Thermal Resistance Junction To Case (Maximum @ IGBT) | |
| Thermal Resistance Junction-to-Ambient | |
| Turn-Off Delay Time | |
| Turn-Off Switching Energy | |
| Vce(on) (Max) @ Vge, Ic | |
| Vce(sat) (Typical) | |
| Voltage |
The FGHL75T65MQD is a 650V, 75A Field Stop Trench IGBT from On Semiconductor, designed for high efficiency power conversion applications. It utilizes advanced 4th generation mid-speed IGBT technology combined with a full current rated co-pack diode. Key electrical characteristics include a maximum collector-to-emitter voltage of 650 V, a continuous collector current of 80 A at TC=25°C (75 A at 100°C), and a typical saturation voltage of 1.45 V at IC=75 A. The device offers positive temperature coefficient for easy parallel operation and is capable of handling pulsed collector currents up to 300 A. The IGBT is housed in a TO-247-3 through-hole package (CASE 340CX) with long leads, suitable for robust mounting. It is RoHS compliant and has a wide operating junction temperature range of -55°C to +175°C, making it suitable for demanding industrial environments. Typical applications include solar inverters, UPS, ESS, PFC, and converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.30 | $7.30 |
| 10+ | $4.94 | $4.94 |
| 450+ | $3.06 | $3.06 |
| 900+ | $3.04 | $3.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-to-emitter voltage is 650 V.
The package is TO-247-3 (through-hole).
The operating junction temperature range is -55°C to +175°C.
Yes, it is RoHS3 compliant as stated in the datasheet.
The typical collector-to-emitter saturation voltage is 1.45 V at VGE=15V and IC=75A.
The typical gate charge is 145 nC.
Typical turn-on energy is 1.94 mJ and turn-off energy is 1.55 mJ at 400V, 75A, 10 Ohm, 15V.