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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,350 pcs
|
1350 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current (Maximum @ TC=100 °C) | |
| Collector To Emitter Breakdown Voltage (Minimum/Typical @ VGE=0 V, IC=1 mA) | |
| Collector To Emitter Saturation Voltage (Typical/Maximum @ VGE=15 V, IC=75 A) | |
| Collector to Emitter Cut-off Current | |
| Current | |
| Diode Forward Current (Maximum @ TC=100 °C) | |
| Diode Forward Current (Maximum @ TC=25 °C) | |
| Gate Charge | |
| Gate Leakage Current | |
| Gate-to-Emitter Voltage | |
| IGBT Type | |
| Input Type | |
| Maximum Junction Temperature | |
| Maximum Lead Temperature for Soldering | |
| Mounting Type | |
| Number of Pins | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Maximum @ TC=100 °C) | |
| Pulsed Collector Current (Maximum @ ICM rating) | |
| Pulsed Collector Current (Maximum @ ILM test) | |
| Pulsed Diode Maximum Forward Current | |
| Reverse Recovery Time (trr) | |
| Storage Temperature | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Temperature Coefficient of Breakdown Voltage | |
| Termination Style | |
| Test Condition | |
| Thermal Resistance Junction-to-Ambient | |
| Thermal Resistance Junction-to-Case (Diode) | |
| Thermal Resistance Junction-to-Case (IGBT) | |
| Transient Gate-to-Emitter Voltage | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The FGHL75T65LQDTL4 is a 650V, 75A Trench Field Stop IGBT from On Semiconductor, part of the Field Stop 4th Generation family. It integrates a co-packed soft and fast recovery diode, making it suitable for applications requiring high efficiency and reliability.
Key electrical characteristics include a collector-emitter saturation voltage of 1.15V typical at 75A, a maximum junction temperature of 175°C, and a total power dissipation of 469W at 25°C case temperature. The device is designed for low switching losses with a typical switching energy of 1.01mJ (on) and 2.53mJ (off) under standard test conditions.
The IGBT is housed in a TO-247-4 package with a Kelvin emitter configuration for optimized switching performance. It is through-hole mountable and rated for a maximum lead soldering temperature of 260°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $8.83 | $8.83 |
| 30+ | $5.17 | $5.17 |
| 120+ | $4.36 | $4.36 |
| 510+ | $3.90 | $3.90 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCES) is 650V.
The maximum collector current is 80A at TC=25°C and 75A at TC=100°C.
It is available in a TO-247-4 package (through-hole, 4 pins).
The operating junction and storage temperature range is -55°C to +175°C.
The part is listed as RoHS3 compliant, but this data is unverified.