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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,150 pcs
|
3150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| Gate Charge | |
| Gate-to-Emitter Voltage | |
| IC (Maximum @ TC=100 °C) | |
| IF (Maximum @ TC=100 °C) | |
| IF (Maximum @ TC=25 °C) | |
| IGBT Type | |
| Input Type | |
| Lead Temperature for Soldering | |
| Mounting Type | |
| Operating Junction Temperature | |
| Operating Temperature | |
| PD (Maximum @ TC=100 °C) | |
| Power | |
| Pulsed Collector Current | |
| Pulsed Diode Maximum Forward Current | |
| RθJC (Maximum) | |
| Supplier Device Package | |
| Switching Energy | |
| Switching Energy (off) | |
| Td (on | |
| Temperature Coefficient of Breakdown Voltage | |
| Test Condition | |
| Thermal Resistance Junction-to-Ambient | |
| Transient Gate-to-Emitter Voltage | |
| Turn-Off Delay Time | |
| Vce(on) (Max) @ Vge, Ic | |
| Vce(sat) Typical @ Ic=50A | |
| Voltage |
The FGHL50T65SQDT is a 650 V, 50 A Trench Field Stop IGBT from On Semiconductor, designed for applications requiring low conduction and switching losses. It incorporates a monolithic diode and is based on onsemi's 4th generation field stop technology.
Key electrical specifications include a maximum collector-to-emitter voltage of 650 V, a continuous collector current of 100 A at 25°C (50 A at 100°C), and a pulsed collector current capability of 200 A. The typical saturation voltage is 1.47 V at 50 A. The device offers a maximum junction temperature of 175°C and a power dissipation of 268 W at 25°C.
The FGHL50T65SQDT is supplied in a TO-247-3 through-hole package, suitable for high-power PCB mounting. It is Pb-free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $6.40 | $6.40 |
| 30+ | $3.65 | $3.65 |
| 120+ | $3.04 | $3.04 |
| 510+ | $2.60 | $2.60 |
| 1,020+ | $2.55 | $2.55 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-to-emitter voltage (VCES) is 650 V.
The maximum continuous collector current (IC) at TC=25°C is 100 A.
The device is available in a TO-247-3 through-hole package.
The maximum operating junction temperature (TJ) is 175 °C.
Yes, the device is RoHS3 compliant and Pb-free as stated in the datasheet.
The typical saturation voltage VCE(sat) at Ic=50A is 1.47 V.
Typical switching energies are 223 µJ (turn-on) and 91.13 µJ (turn-off) at 400V, 12.5A, 4.7 Ohm, 15V.