| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
52,000 pcs
|
52000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Capacitance | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The FGH80N60FD2TU is a Field Stop IGBT from On Semiconductor designed for high-efficiency power switching. It is rated for a collector-emitter voltage of 600V and a continuous collector current of 80A at 25°C, with a maximum power dissipation of 290W. The device features a low saturation voltage of 1.8V typical at 40A and fast switching characteristics, making it suitable for applications such as induction heating and power factor correction.
The IGBT is housed in a TO-247-3 through-hole package, providing robust thermal performance with a junction-to-case thermal resistance of 0.43°C/W. It operates over a junction temperature range of -55°C to 150°C and is Pb-Free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 8,550+ | $2.35 | $2.35 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCES) is 600V.
The continuous collector current is 80A at TC=25°C.
It is available in a TO-247-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
Yes, the device is RoHS3 compliant and Pb-Free as per the datasheet.