| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,249 pcs
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4249 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FGH75T65SHDTLN4 is a 650V, 75A Trench Field Stop IGBT from onsemi, designed for applications requiring low conduction and switching losses. It utilizes onsemi's field stop 3rd generation IGBT technology.
Key electrical specifications include a maximum collector-to-emitter voltage of 650V, a maximum collector current of 150A at TC=25°C, and a maximum power dissipation of 455W. The device features a typical saturation voltage of 1.6V at 75A and typical switching energies of 1.06 mJ (on) and 1.56 mJ (off).
The FGH75T65SHDTLN4 is housed in a TO-247-4 package with through-hole mounting. It has an operating junction temperature range of -55°C to 175°C. The device is suitable for solar inverters, UPS, welders, telecom, ESS, and PFC applications.
The maximum collector-to-emitter voltage (VCES) is 650 V.
The maximum collector current is 150 A at TC=25°C and 75 A at TC=100°C.
The FGH75T65SHDTLN4 is in a TO-247-4 package with through-hole mounting.
The operating junction temperature range is -55°C to 175°C.
It uses Trench Field Stop IGBT technology.
Typical switching energy is 1.06 mJ (on) and 1.56 mJ (off) at 400V, 75A, 15 Ohm, 15V.
The datasheet states it is Pb Free and RoHS Compliant, but this is unverified.