| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Cut-Off Current (VCE = VCES, VGE = 0V) | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Saturation Voltage (Typical @ VGE = 15 V, IC = 75 A, TJ = 125 °C) | |
| Current | |
| Gate Charge | |
| Gate-Emitter Leakage Current (VGE = VGES, VCE = 0V) | |
| Gate-Emitter Threshold Voltage (IC = 250 µA, VCE = VGE) | |
| IGBT Type | |
| Input Capacitance (VCE = 30V, VGE = 0V, f = 1MHz) | |
| Input Type | |
| Maximum Lead Temperature for Soldering (1/8" from case for 5 seconds) | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (VCE = 30V, VGE = 0V, f = 1MHz) | |
| Packing Method | |
| Power | |
| Pulsed Collector Current @ TC=25°C | |
| SVHC Present | |
| Standard Package Quantity | |
| Supplier Device Package | |
| Switching Energy | |
| Switching Energy (Turn-Off) (400V, 75A, 3 Ohm, 15V) | |
| Td (on | |
| Test Condition | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Turn-Off Delay Time (400V, 75A, 3 Ohm, 15V) | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage | |
| collector_current (Maximum @ TC=100 °C) | |
| power_dissipation (Maximum @ TC=100 °C) |
FGH75N60UFTU is a field-stop IGBT from On Semiconductor designed for high-power switching applications. It features a collector-to-emitter voltage rating of 600V and a collector current rating of 150A at case temperature 25°C (75A at 100°C). Maximum power dissipation is 452W at 25°C. The device uses field-stop technology to achieve low conduction and switching losses, making it suitable for power conversion systems.
Key electrical characteristics include a typical collector-emitter saturation voltage of 1.9V at IC=75A and VGE=15V, and a typical gate-emitter threshold voltage of 5.0V. Input capacitance is 3850pF and output capacitance is 375pF at VCE=30V. The device can operate over a junction temperature range of -55°C to 150°C, with a junction-to-case thermal resistance of 0.276°C/W.
This IGBT is intended for applications such as solar inverters, uninterruptible power supplies (UPS), welders, and power factor correction (PFC) circuits. The TO-247-3 package supports through-hole mounting, allowing efficient heat dissipation through the collector flange. The device is Pb-free and RoHS compliant, meeting current environmental requirements.
The collector-to-emitter breakdown voltage is 600V (minimum).
The FGH75N60UFTU comes in a TO-247-3 through-hole package.
The operating junction temperature range is -55°C to +150°C.
Yes, the datasheet states this device is Pb-Free and RoHS compliant.
The collector current is 150A at TC=25°C and 75A at TC=100°C.
The typical VCE(sat) is 1.9V at IC=75A, VGE=15V, TJ=25°C.
The maximum power dissipation is 452W at case temperature 25°C, derated to 181W at 100°C.