| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,500 pcs
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3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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FGH75N60UFTU is a field-stop IGBT from On Semiconductor designed for high-power switching applications. It features a collector-to-emitter voltage rating of 600V and a collector current rating of 150A at case temperature 25°C (75A at 100°C). Maximum power dissipation is 452W at 25°C. The device uses field-stop technology to achieve low conduction and switching losses, making it suitable for power conversion systems.
Key electrical characteristics include a typical collector-emitter saturation voltage of 1.9V at IC=75A and VGE=15V, and a typical gate-emitter threshold voltage of 5.0V. Input capacitance is 3850pF and output capacitance is 375pF at VCE=30V. The device can operate over a junction temperature range of -55°C to 150°C, with a junction-to-case thermal resistance of 0.276°C/W.
This IGBT is intended for applications such as solar inverters, uninterruptible power supplies (UPS), welders, and power factor correction (PFC) circuits. The TO-247-3 package supports through-hole mounting, allowing efficient heat dissipation through the collector flange. The device is Pb-free and RoHS compliant, meeting current environmental requirements.
The collector-to-emitter breakdown voltage is 600V (minimum).
The FGH75N60UFTU comes in a TO-247-3 through-hole package.
The operating junction temperature range is -55°C to +150°C.
Yes, the datasheet states this device is Pb-Free and RoHS compliant.
The collector current is 150A at TC=25°C and 75A at TC=100°C.
The typical VCE(sat) is 1.9V at IC=75A, VGE=15V, TJ=25°C.
The maximum power dissipation is 452W at case temperature 25°C, derated to 181W at 100°C.