FGH60T65SHD-F155 FGH60T65SHD-F155 is a 650V, 120A IGBT from On Semiconductor with Trench Field Stop technology. It is packaged in a TO247-3 through-hole package and is RoHS compliant.
Mfr Part #:

FGH60T65SHD-F155

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
FGH60T65SHD-F155 is a 650V, 120A IGBT from On Semiconductor with Trench Field Stop technology. It is packaged in a TO247-3 through-hole package and is RoHS compliant.
✓ Total Stock: 26,425 pcs
$ Price Range: $2.35 - $6.02

FGH60T65SHD-F155 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
18,000 pcs
18000 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
8,423 pcs
8423 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
2 pcs
2 pcs On Request 1 On Request On Request On Request On Request On Request

FGH60T65SHD-F155 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Storage Temperature
Supplier Device Package
Switching Energy
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

FGH60T65SHD-F155 Description

Short technical summary and product information.

The FGH60T65SHD-F155 is a 650V, 120A IGBT from On Semiconductor, utilizing Trench Field Stop technology for low conduction and switching losses. It features a maximum collector current of 120A at 25°C case temperature, 60A at 100°C, and a pulsed current capability of 180A. The device has a typical saturation voltage of 1.6V at 15V gate voltage and 60A collector current. It includes an anti-parallel diode with 60A forward current rating.

 

The IGBT offers a maximum junction temperature of 175°C and a power dissipation of 349W at 25°C. Switching characteristics include 1.69mJ turn-on energy and 630µJ turn-off energy under specified conditions. The gate charge is 102 nC.

 

This device is designed for applications such as solar inverters, UPS, welders, telecom, ESS, and PFC. It is housed in a TO247-3 package with through-hole mounting, suitable for high-power designs. The part is Pb-Free and RoHS compliant.

FGH60T65SHD-F155 Quick Information

Product Type: IGBT (Insulated Gate Bipolar Transistor)
Series: FGH60T65SHD
Canonical Name: ON Semiconductor FGH60T65SHD-F155
Subcategory: Single IGBT

FGH60T65SHD-F155 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FGH60T65SHD-F155 Estimated Pricing

Qty Low High
1+ $6.02 $6.02
30+ $3.42 $3.42
120+ $2.84 $2.84
510+ $2.42 $2.42
1,020+ $2.35 $2.35

Estimated market price range - modelled values for guidance only, not live distributor offers.

FGH60T65SHD-F155 Features

  • 650V maximum collector-emitter voltage.
  • 120A continuous collector current at 25°C.
  • Trench Field Stop technology for low losses.
  • Low saturation voltage of 1.6V typical.
  • RoHS compliant and Pb-Free.

FGH60T65SHD-F155 Applications

  • Used in solar inverter power stages.
  • Ideal for UPS and welder applications.
  • Suitable for telecom and ESS power supplies.
  • Designed for PFC circuits.

FGH60T65SHD-F155 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the FGH60T65SHD-F155?

TO247-3.

What is the operating junction temperature range?

-55°C to 175°C.

Is the FGH60T65SHD-F155 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the maximum collector-emitter voltage?

650 V.

What is the maximum collector current at 25°C?

120 A.

What is the maximum gate-emitter voltage?

±20 V, ±30 V transient.

What are the typical switching delays?

Turn-on delay 26 ns, turn-off delay 87 ns.

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