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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,990 pcs
|
2990 pcs | On Request | 1 | On Request | On Request | 2021+ | On Request | On Request | |
|
2,100 pcs
|
2100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,565 pcs
|
1565 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
688 pcs
|
688 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
250 pcs
|
250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
218 pcs
|
218 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-to-Emitter Breakdown Voltage | |
| Current | |
| Gate Charge | |
| Gate-to-Emitter Voltage | |
| Halogen Free | |
| IC (Maximum @ TC=100 °C) | |
| IF (Maximum @ TC=100 °C) | |
| IF (Maximum @ TC=25 °C) | |
| IGBT Type | |
| Industrial Grade | |
| Input Type | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| PD (Maximum @ TC=100 °C) | |
| Power | |
| Pulsed Collector Current | |
| Pulsed Diode Maximum Forward Current | |
| Reverse Recovery Time (trr) | |
| RθJC (Maximum) | |
| Standard Package Qty | |
| Storage Temperature | |
| Supplier Device Package | |
| Switching Energy | |
| Switching Energy (off) | |
| Td (on | |
| Test Condition | |
| Thermal Resistance Junction-to-Ambient | |
| Transient Gate-to-Emitter Voltage | |
| VCE(sat) (Typical @ IC=60 A) | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The FGH60N60SMD is a 600V, 120A Field Stop IGBT from onsemi, designed for high-efficiency power conversion. It features a maximum collector current of 120A at 25°C and 60A at 100°C, with a pulsed current capability of 180A. The device offers a low typical saturation voltage of 1.9V at 60A and fast switching with typical turn-on energy of 1.26mJ and turn-off energy of 450µJ.
This IGBT integrates a freewheeling diode with a forward current rating of 60A at 25°C and a reverse recovery time of 39ns. The maximum junction temperature is 175°C, and the thermal resistance from junction to case is 0.25°C/W for the IGBT and 1.1°C/W for the diode.
The FGH60N60SMD is housed in a TO-247-3 through-hole package, suitable for applications such as solar inverters, UPS systems, welders, telecom power supplies, and PFC circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.73 | $7.73 |
| 30+ | $4.47 | $4.47 |
| 120+ | $3.76 | $3.76 |
| 510+ | $3.27 | $3.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector to emitter voltage (VCES) is 600V.
The maximum collector current is 120A at TC=25°C and 60A at TC=100°C. The pulsed collector current is 180A.
The FGH60N60SMD is available in a TO-247-3 through-hole package.
The maximum operating junction temperature is 175°C.
The datasheet states the device is Pb-Free and RoHS Compliant, but this is unverified.
The typical saturation voltage (VCE(sat)) is 1.9V at IC=60A.
The typical turn-on energy (Eon) is 1.26mJ and turn-off energy (Eoff) is 450µJ, tested at 400V, 60A, 3Ohm, 15V.