FGH60N60SFDTU The FGH60N60SFDTU is a 600V, 120A Field Stop IGBT from ON Semiconductor. It features low saturation voltage (2.3V typ) and fast switching, housed in a TO-247-3 through-hole package.
Mfr Part #:

FGH60N60SFDTU

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FGH60N60SFDTU is a 600V, 120A Field Stop IGBT from ON Semiconductor. It features low saturation voltage (2.3V typ) and fast switching, housed in a TO-247-3 through-hole package.
✓ Total Stock: 39,478 pcs
$ Price Range: $3.25

FGH60N60SFDTU Available from 3 distributors

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✓ Non-Authorised
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28,000 pcs
28000 pcs On Request 1 On Request On Request On Request On Request On Request
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10,333 pcs
10333 pcs On Request 1 On Request On Request On Request On Request On Request
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1,145 pcs
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FGH60N60SFDTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Storage Temperature
Supplier Device Package
Switching Energy
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

FGH60N60SFDTU Description

Short technical summary and product information.

The FGH60N60SFDTU is a 600V, 120A Field Stop IGBT from ON Semiconductor, designed for high-efficiency power conversion. It utilizes field stop technology to achieve low conduction and switching losses, making it suitable for solar inverters, UPS systems, welders, and power factor correction circuits.

 

Key electrical specifications include a maximum collector-emitter voltage of 600V, continuous collector current of 120A at 25°C (60A at 100°C), and a pulsed current capability of 180A. The typical collector-emitter saturation voltage is 2.3V at 60A and 15V gate drive. Switching performance is characterized by turn-on delay of 22ns, turn-off delay of 134ns, and switching energies of 1.79mJ (on) and 670µJ (off). Gate charge is 198nC.

 

The device is housed in a TO-247-3 through-hole package with a maximum junction-to-case thermal resistance of 0.33°C/W. It operates over a junction temperature range of -55°C to 150°C. The FGH60N60SFDTU is RoHS compliant and Pb-Free, as confirmed by the datasheet.

FGH60N60SFDTU Quick Information

Product Type: IGBT
Canonical Name: FGH60N60SFDTU IGBT, Field Stop, 600V, 120A, TO-247-3
Subcategory: Single IGBT

FGH60N60SFDTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FGH60N60SFDTU Estimated Pricing

Qty Low High
450+ $3.25 $3.25

Estimated market price range - modelled values for guidance only, not live distributor offers.

FGH60N60SFDTU Features

  • 600V collector-emitter voltage rating.
  • 120A continuous collector current at 25°C.
  • Low saturation voltage of 2.3V typical.
  • Fast switching with 22ns turn-on delay.
  • RoHS compliant and Pb-Free.

FGH60N60SFDTU Applications

  • Used in solar inverter power stages.
  • Ideal for UPS and backup power systems.
  • Suitable for welding equipment.
  • Applied in power factor correction circuits.

FGH60N60SFDTU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the FGH60N60SFDTU?

The maximum collector-emitter voltage (Vces) is 600V.

What package does the FGH60N60SFDTU come in?

It comes in a TO-247-3 through-hole package.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FGH60N60SFDTU RoHS compliant?

Yes, it is RoHS3 compliant and Pb-Free as per the datasheet.

What is the typical collector-emitter saturation voltage?

The typical VCE(sat) is 2.3V at IC=60A, VGE=15V.

What is the gate charge of this IGBT?

The gate charge (Qg) is 198 nC.

What is the maximum power dissipation at 25°C?

The maximum power dissipation is 378W at case temperature 25°C.

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