| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,000 pcs
|
28000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10,333 pcs
|
10333 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,145 pcs
|
1145 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FGH60N60SFDTU is a 600V, 120A Field Stop IGBT from ON Semiconductor, designed for high-efficiency power conversion. It utilizes field stop technology to achieve low conduction and switching losses, making it suitable for solar inverters, UPS systems, welders, and power factor correction circuits.
Key electrical specifications include a maximum collector-emitter voltage of 600V, continuous collector current of 120A at 25°C (60A at 100°C), and a pulsed current capability of 180A. The typical collector-emitter saturation voltage is 2.3V at 60A and 15V gate drive. Switching performance is characterized by turn-on delay of 22ns, turn-off delay of 134ns, and switching energies of 1.79mJ (on) and 670µJ (off). Gate charge is 198nC.
The device is housed in a TO-247-3 through-hole package with a maximum junction-to-case thermal resistance of 0.33°C/W. It operates over a junction temperature range of -55°C to 150°C. The FGH60N60SFDTU is RoHS compliant and Pb-Free, as confirmed by the datasheet.
| Qty | Low | High |
|---|---|---|
| 450+ | $3.25 | $3.25 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vces) is 600V.
It comes in a TO-247-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant and Pb-Free as per the datasheet.
The typical VCE(sat) is 2.3V at IC=60A, VGE=15V.
The gate charge (Qg) is 198 nC.
The maximum power dissipation is 378W at case temperature 25°C.