Mfr Part #:

FGH50N6S2D

The FGH50N6S2D is a 600V, 75A N-channel IGBT with anti-parallel Stealth diode in a TO-247-3 package. It features low gate charge and fast switching for high-voltage SMPS applications.

✓ Total Stock: 1,605 pcs

$ Price Range: $6.69

FGH50N6S2D Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	1,600 pcs On Request	1600 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Hybrid Electronics ✓ Non-Authorised Inventory information	5 pcs On Request	5 pcs	On Request	1	On Request	On Request	516	On Request	On Request

FGH50N6S2D Description

Short technical summary and product information.

The FGH50N6S2D is an N-channel IGBT from On Semiconductor's SMPS II series, designed for high-voltage switched-mode power supply applications. It integrates an anti-parallel Stealth diode for efficient rectification.

Key electrical specifications include a collector-emitter breakdown voltage of 600V, continuous collector current of 75A at 25°C (60A at 110°C), and pulsed current capability up to 240A. The device features low gate charge (70 nC typical) and low plateau voltage (6.5V typical), enabling reduced gate drive power requirements. Switching energies are 260 µJ (turn-on) and 250 µJ (turn-off) under test conditions of 390V, 30A, 3Ω, 15V.

The IGBT is housed in a through-hole TO-247-3 package, suitable for high-power designs. It operates over a junction temperature range of -55°C to 150°C. Thermal resistance from junction to case is 0.27°C/W for the IGBT and 1.1°C/W for the diode. The device is rated for 100 kHz operation at 390V, 40A and 200 kHz at 390V, 25A.

Typical applications include power factor correction (PFC) circuits, full and half bridge topologies, push-pull circuits, uninterruptible power supplies, and zero voltage/zero current switching circuits. The device is RoHS3 compliant and has an MSL of 1 (unlimited).

FGH50N6S2D Quick Information

Product Type: IGBT (Insulated Gate Bipolar Transistor)

Series: SMPS II

Canonical Name: FGH50N6S2D IGBT 600V 75A TO-247-3

Subcategory: Single IGBT

FGH50N6S2D Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 (Unlimited)

REACH Status: REACH Unaffected

Lead Free: Yes

FGH50N6S2D Estimated Pricing

Qty	Low	High
450+	$6.69	$6.69

Estimated market price range - modelled values for guidance only, not live distributor offers.

FGH50N6S2D Features

600V collector-emitter breakdown voltage.
75A continuous collector current at 25°C.
Low gate charge of 70 nC typical.
Fast switching with 90 ns fall time.
TO-247-3 through-hole package.

FGH50N6S2D Applications

Power factor correction (PFC) circuits.
Full and half bridge topologies.
Uninterruptible power supplies (UPS).
Zero voltage switching (ZVS) circuits.

FGH50N6S2D FAQs

7 frequently asked questions generated from this part’s specifications.

What is the collector-emitter breakdown voltage?

600V minimum.

What package does the FGH50N6S2D come in?

TO-247-3 through-hole package.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the FGH50N6S2D RoHS compliant?

RoHS3 Compliant (unverified).

What is the maximum continuous collector current?

75A at 25°C case temperature.

What is the typical gate charge?

70 nC at VGE = 15V.

What is the switching energy?

Turn-on 260 µJ, turn-off 250 µJ at 390V, 30A, 3Ω, 15V.

Category	Transistors - IGBTs - Single
Manufacturer Name	On Semiconductor
AEC Qualified	No
Automotive Grade	No
Current	75 A
Gate Charge	70 nC
Industrial Grade	No
Input Type	Standard
Lead Style	Through Hole
Medical Grade	No
Military Grade	No
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power	463 W
Reverse Recovery Time (trr)	55 ns
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	TO-247-3
Switching Energy	260 µJ
Td (on	13 ns
Test Condition	390V, 30A, 3Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2.7 V
Voltage	600 V