| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
900 pcs
|
900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Container Type | |
| Gate Charge | |
| Lead Spacing | |
| Lead Style | |
| Storage Temperature | |
| Tape & Reel |
The FGH4L40T120SWD from On Semiconductor is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance switching applications. It features a robust Field Stop VII Trench construction, providing a cost-effective solution with superior performance.
Key electrical specifications include a breakdown voltage of 1200V and a maximum continuous collector current of 40A. The typical collector-emitter saturation voltage is 1.7V, and the forward voltage is 1.94V. Switching characteristics are optimized with low turn-off energy (Eoff) of 1.14 mJ and turn-on energy (Eon) of 1.38 mJ.
This IGBT is housed in a TO-247-4 package, suitable for industrial applications requiring efficient power management. The device offers tight parameter distribution and is designed for both hard and soft switching topologies, making it ideal for use in UPS and solar energy storage systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200 V.
40 A.
1.7 V.
TO-247-4.
384 W.
Turn-off energy is 1.14 mJ and turn-on energy is 1.38 mJ.
1.94 V typical.