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FGH40N65UFDTU FGH40N65UFDTU is a 650V, 80A Field Stop IGBT from On Semiconductor in a TO-247-3 through-hole package.
Mfr Part #:

FGH40N65UFDTU

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FGH40N65UFDTU is a 650V, 80A Field Stop IGBT from On Semiconductor in a TO-247-3 through-hole package.
Total Stock: 2,114 pcs
$ Price Range: $1.79

FGH40N65UFDTU Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,646 pcs
1646 pcs On Request 1 On Request On Request 1112+ On Request On Request
Non-Authorised Inventory information
468 pcs
468 pcs On Request 1 On Request On Request On Request On Request On Request

FGH40N65UFDTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Td (on
Test Condition
Turn-Off Delay Time
Turn-Off Switching Energy
Vce(on) (Max) @ Vge, Ic
Voltage

FGH40N65UFDTU Description

Short technical summary and product information.

The FGH40N65UFDTU is a Field Stop IGBT designed for high-efficiency power switching applications. It features a collector-emitter voltage rating of 650V and a continuous collector current of 80A, with a power dissipation of 290W. The device offers a low collector-emitter saturation voltage of 2.4V at Vge=15V and Ic=40A, reducing conduction losses.

 

Switching performance is characterized by a turn-on delay time of 24ns and turn-off delay time of 112ns under test conditions of 400V, 40A, and 10Ω gate resistance. The turn-on switching energy is 1.19mJ and turn-off switching energy is 460µJ. Gate charge is 120nC, and the reverse recovery time is 45ns. The IGBT operates over a junction temperature range of -55°C to 150°C.

 

The device is housed in a TO-247-3 package with through-hole mounting, suitable for robust power circuit designs. It uses standard gate drive input levels.

FGH40N65UFDTU Quick Information

Product Type: IGBT (Insulated Gate Bipolar Transistor)
Canonical Name: FGH40N65UFDTU - IGBT, Field Stop, 650V, 80A, TO-247-3
Subcategory: Single IGBT

FGH40N65UFDTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FGH40N65UFDTU Estimated Pricing

Qty Low High
450+ $1.79 $1.79

Estimated market price range - modelled values for guidance only, not live distributor offers.

FGH40N65UFDTU Features

  • Field Stop IGBT technology for low conduction loss.
  • Rated for 650V collector-emitter voltage.
  • 80A continuous collector current capability.
  • Low Vce(sat) of 2.4V typical.
  • TO-247-3 through-hole package.

FGH40N65UFDTU Applications

  • Used in motor drive inverter circuits.
  • Suitable for uninterruptible power supplies.
  • Ideal for induction heating systems.
  • Applied in solar inverter designs.

FGH40N65UFDTU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

650V.

What is the maximum collector current?

80A.

What is the package type?

TO-247-3.

What is the operating temperature range?

-55°C to 150°C (junction).

What is the typical Vce(sat)?

2.4V at Vge=15V, Ic=40A.

Is this device RoHS compliant?

RoHS3 Compliant (unverified).

What is the gate charge?

120 nC.

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