| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Gate Charge | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
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| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The FGH30N6S2D is a 600V, 45A N-Channel IGBT from On Semiconductor, part of the SMPS II series. It integrates an anti-parallel Stealth diode for efficient switching in power supply applications. Key specifications include a collector-emitter breakdown voltage of 600V, continuous collector current of 45A at 25°C (20A at 110°C), and a maximum power dissipation of 167W.
The device features low gate charge (23 nC typical) and low plateau voltage (6.5V typical), enabling reduced gate drive requirements and faster switching. It offers a typical fall time of 90 ns at 125°C and is avalanche rated at 150 mJ. The switching energy is 55 µJ (on) and 100 µJ (off) typical at 390V, 12A, 10Ω, 15V.
Housed in a TO-247-3 package with through-hole mounting, the FGH30N6S2D operates over a junction temperature range of -55°C to 150°C. It is suitable for high-frequency SMPS topologies such as PFC, full bridge, half bridge, push-pull, UPS, and zero-voltage/zero-current switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.58 | $2.58 |
| 10+ | $2.37 | $2.37 |
| 100+ | $2.17 | $2.17 |
| 500+ | $1.96 | $1.96 |
| 1,000+ | $1.75 | $1.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V
45A at 25°C, 20A at 110°C
-55°C to 150°C (junction)
TO-247-3
RoHS3 Compliant (unverified)
23 nC at VGE=15V
55 µJ (on) and 100 µJ (off) typical at 390V, 12A, 10Ω, 15V