FGH30N6S2D FGH30N6S2D is a 600V, 45A N-Channel IGBT with anti-parallel Stealth diode, designed for high-voltage switched mode power supplies.
Mfr Part #:

FGH30N6S2D

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FGH30N6S2D is a 600V, 45A N-Channel IGBT with anti-parallel Stealth diode, designed for high-voltage switched mode power supplies.
✓ Total Stock: 4 pcs
$ Price Range: $1.75 - $2.58

FGH30N6S2D Available from 1 distributor

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✓ Non-Authorised
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FGH30N6S2D Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

FGH30N6S2D Description

Short technical summary and product information.

The FGH30N6S2D is a 600V, 45A N-Channel IGBT from On Semiconductor, part of the SMPS II series. It integrates an anti-parallel Stealth diode for efficient switching in power supply applications. Key specifications include a collector-emitter breakdown voltage of 600V, continuous collector current of 45A at 25°C (20A at 110°C), and a maximum power dissipation of 167W.

 

The device features low gate charge (23 nC typical) and low plateau voltage (6.5V typical), enabling reduced gate drive requirements and faster switching. It offers a typical fall time of 90 ns at 125°C and is avalanche rated at 150 mJ. The switching energy is 55 µJ (on) and 100 µJ (off) typical at 390V, 12A, 10Ω, 15V.

 

Housed in a TO-247-3 package with through-hole mounting, the FGH30N6S2D operates over a junction temperature range of -55°C to 150°C. It is suitable for high-frequency SMPS topologies such as PFC, full bridge, half bridge, push-pull, UPS, and zero-voltage/zero-current switching circuits.

FGH30N6S2D Quick Information

Product Type: IGBT - Single
Series: SMPS II
Canonical Name: FGH30N6S2D - 600V N-Channel IGBT with Anti-Parallel Stealth Diode
Subcategory: Single IGBT

FGH30N6S2D Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

FGH30N6S2D Estimated Pricing

Qty Low High
1+ $2.58 $2.58
10+ $2.37 $2.37
100+ $2.17 $2.17
500+ $1.96 $1.96
1,000+ $1.75 $1.75

Estimated market price range - modelled values for guidance only, not live distributor offers.

FGH30N6S2D Features

  • 600V collector-emitter breakdown voltage.
  • 45A continuous collector current rating.
  • Low gate charge of 23 nC typical.
  • Fast fall time of 90 ns at 125°C.
  • Avalanche energy rated at 150 mJ.

FGH30N6S2D Applications

  • Power Factor Correction (PFC) circuits.
  • Full bridge and half bridge topologies.
  • Push-Pull circuits.
  • Uninterruptible power supplies.
  • Zero voltage and zero current switching circuits.

FGH30N6S2D FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

600V

What is the continuous collector current rating?

45A at 25°C, 20A at 110°C

What is the operating temperature range?

-55°C to 150°C (junction)

What package type is the FGH30N6S2D available in?

TO-247-3

Is this part RoHS compliant?

RoHS3 Compliant (unverified)

What is the typical gate charge?

23 nC at VGE=15V

What is the switching energy?

55 µJ (on) and 100 µJ (off) typical at 390V, 12A, 10Ω, 15V

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