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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,340 pcs
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1340 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current (Maximum @ TC=100 °C) | |
| Current | |
| Gate Charge | |
| Gate-Emitter Voltage | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Maximum @ TC=100 °C) | |
| Pulsed Collector Current | |
| Reverse Recovery Time (trr) | |
| Standard Package Quantity | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Switching Energy | |
| Switching Energy (off) | |
| Td (on | |
| Test Condition | |
| Thermal Resistance Junction-to-Case (Diode) | |
| Thermal Resistance Junction-to-Case (IGBT) | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The FGH25T120SMD-F155 is a 1200V, 25A (TC=100°C) trench field stop IGBT manufactured by On Semiconductor. It utilizes innovative field stop trench technology to provide optimum performance for hard switching applications such as solar inverters, UPS, welders, and PFC circuits.
Key specifications include a maximum collector-emitter voltage of 1200V, a maximum collector current of 50A at TC=25°C (25A at TC=100°C), and a pulsed collector current rating of 100A. The device has a typical saturation voltage of 1.8V at IC=25A, a gate charge of 225 nC, and a maximum power dissipation of 428W at TC=25°C (214W at TC=100°C). The operating junction temperature range is -55°C to 175°C.
The IGBT comes in a standard TO-247-3 through-hole package, making it suitable for power circuit designs requiring high efficiency and reliable switching performance. The device is lead-free and RoHS compliant.
The maximum collector-emitter voltage is 1200V.
The operating junction temperature range is -55°C to 175°C.
Yes, the device is RoHS3 compliant and Pb-free, as stated in the datasheet.
It comes in a TO-247-3 through-hole package.
The typical gate charge is 225 nC.
The maximum power dissipation at TC=25°C is 428W.