| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,030 pcs
|
2030 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The ON Semiconductor FGH20N60UFD is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. It offers a robust 600V collector-emitter voltage (Vces) and a maximum continuous collector current (Ic) of 40A at 25°C, derating to 20A at 100°C. The pulsed collector current capability reaches up to 60A.
This IGBT features a typical collector-emitter saturation voltage (Vce_sat) of 2.4V and fast switching characteristics with a typical fall time of 64ns and reverse recovery time of 34ns. Its maximum power dissipation is rated at 165W at 25°C, making it suitable for high-power applications. The operating junction temperature ranges from -55°C to 150°C.
Packaged in the industry-standard TO-247 through-hole format, the FGH20N60UFD is well-suited for power electronics designs requiring reliable performance and thermal management. Its applications include solar inverters, uninterruptible power supplies (UPS), and welding equipment.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.63 | $3.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V
TO-247 through-hole
-55°C to 150°C
40A
165W
2.4V