| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
22,480 pcs
|
22480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The FGD2736G3-F085V is a single IGBT (Insulated Gate Bipolar Transistor) manufactured by ON Semiconductor. It is part of the ECOSPARK1 family and is identified with an ignition (IGN) designation. The device offers a maximum collector-emitter breakdown voltage of 360V and a maximum collector current of 37.5A, making it suitable for medium-voltage switching.
Electrical characteristics include a maximum power dissipation of 150W, a saturation voltage (Vce(on)) of 1.65V at 4.5V gate-emitter voltage and 10A collector current, and a gate charge of 18nC. The typical turn-on delay is 900ns and turn-off delay is 4.4µs, with a reverse recovery time of 3µs.
The device is supplied in a TO-252-3 (DPAK) surface-mount package. It supports a junction temperature range of -40°C to 175°C, suitable for high-temperature environments. The standard input type allows direct connection to typical gate drive circuits.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.95 | $0.95 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 360 V.
The maximum collector current is 37.5 A.
The maximum power dissipation is 150 W.
The operating junction temperature range is -40°C to 175°C.
The device is available in a TO-252-3 (DPAK) surface-mount package, with supplier device package DPAK.
The part is listed as RoHS3 Compliant in the database, but this compliance status is unverified.
Typical turn-on delay is 900 ns and turn-off delay is 4.4 µs.