| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,600 pcs
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1600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FGB5N60UNDF is a 600V, 10A NPT (Non-Punch Through) IGBT from ON Semiconductor, designed for high-efficiency power switching applications. It offers a low collector-emitter saturation voltage of 2.4V at 15V gate drive and 5A collector current, minimizing conduction losses. The device exhibits fast switching performance with typical turn-on delay of 5.4ns and turn-off delay of 25.4ns under test conditions of 400V, 5A, and 10Ω gate resistance.
For thermal management, the IGBT can dissipate up to 73.5W and operates over a junction temperature range of -55°C to 150°C. The gate charge is 12.1nC, enabling efficient gate drive design. Switching energy is rated at 80µJ (turn-on) and 70µJ (turn-off), making it suitable for medium-frequency applications.
The device is housed in a TO-263 (D²PAK) surface mount package, which offers good thermal conductivity and is compatible with standard reflow soldering processes. The package has a moisture sensitivity level of 1 (unlimited), indicating no special handling requirements for moisture exposure.
Typical applications include motor drives, uninterruptible power supplies, power factor correction circuits, and industrial power converters. The NPT structure provides ruggedness and short-circuit capability, enhancing reliability in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1,600+ | $0.57 | $0.57 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating junction temperature range is -55°C to 150°C.
It is available in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB surface mount package, also referred to as D²PAK.
Yes, it is listed as RoHS3 Compliant, though this status is unverified from the datasheet.
The collector-emitter voltage rating is 600V.
The gate charge is 12.1 nC.
Turn-on switching energy is 80 µJ and turn-off switching energy is 70 µJ, tested at 400V, 5A, 10Ω gate resistance, and 15V gate drive.