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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,420 pcs
|
1420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The FGB40T65SPD-F085 is a single IGBT from ON Semiconductor using Trench Field Stop technology. It is rated for a maximum collector-emitter voltage of 650V and a continuous collector current of 80A. The device dissipates up to 267W and has a typical saturation voltage of 2.4V at 15V gate drive and 40A collector current.
This IGBT features a standard gate drive input and a typical gate charge of 36 nC. Switching characteristics include turn-on delay of 18ns and turn-off delay of 35ns under test conditions of 400V, 40A, 6 ohm gate resistor, and 15V gate drive. The switching energy is 970µJ (on) and 280µJ (off). The integrated diode has a reverse recovery time of 34ns.
The device is designed for surface mount assembly in the TO-263-3 (D2PAK) package. It operates over a junction temperature range of -55°C to 175°C. The device is listed as RoHS compliant and has an MSL rating of 1. It is suitable for applications such as motor drives, power factor correction, and UPS systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $6.43 | $6.43 |
| 10+ | $4.31 | $4.31 |
| 100+ | $3.11 | $3.11 |
| 800+ | $2.37 | $2.37 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
TO-263-3, D2PAK (2 leads + tab), also known as D2PAK (TO-263).
-55°C to 175°C (junction temperature).
Yes, it is listed as RoHS3 compliant (unverified).
36 nC typical.
970µJ turn-on and 280µJ turn-off typical.
267W.