Mfr Part #:

FGB30N6S2D

The FGB30N6S2D is a 600V, 45A N-Channel IGBT with anti-parallel diode from ON Semiconductor. It features low gate charge and fast switching for SMPS designs.

✓ Total Stock: 5,000 pcs

$ Price Range: $2.13

FGB30N6S2D Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	5,000 pcs On Request	5000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FGB30N6S2D Description

Short technical summary and product information.

The FGB30N6S2D is a 600V N-Channel IGBT from ON Semiconductor's SMPS II series, featuring an integrated anti-parallel Stealth diode. It is designed for high-voltage switched-mode power supply applications where low conduction loss, fast switching, and avalanche capability are essential.

Key electrical specifications include a collector-emitter breakdown voltage of 600V, continuous collector current of 45A at 25°C (20A at 110°C), pulsed current capability of 108A, and maximum power dissipation of 167W. The device offers low gate charge (23 nC typical) and low plateau voltage (6.5V typical), reducing gate drive requirements. Switching performance is characterized by typical turn-on delay of 6 ns, turn-off delay of 40 ns, and fall time of 90 ns at 125°C. The IGBT is avalanche rated at 150 mJ and has a switching safe operating area of 60A at 600V.

The FGB30N6S2D is housed in a surface-mount TO-263-3 (D²Pak) package with gull wing terminals, suitable for automated assembly. It operates over a junction temperature range of -55°C to 150°C. Typical applications include power factor correction (PFC) circuits, full-bridge and half-bridge topologies, push-pull circuits, uninterruptible power supplies, and zero-voltage/zero-current switching circuits.

FGB30N6S2D Quick Information

Product Type: IGBT (Insulated Gate Bipolar Transistor)

Series: SMPS II

Canonical Name: FGB30N6S2D N-Channel IGBT with Anti-Parallel Diode

Subcategory: Single IGBTs

FGB30N6S2D Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): MSL 1 Unlimited

REACH Status: REACH Unaffected

FGB30N6S2D Estimated Pricing

Qty	Low	High
400+	$2.13	$2.13

Estimated market price range - modelled values for guidance only, not live distributor offers.

FGB30N6S2D Features

600V collector-emitter breakdown voltage.
45A continuous collector current at 25°C.
Low gate charge of 23 nC typical.
Fast switching with 90 ns fall time.
Avalanche energy rated at 150 mJ.

FGB30N6S2D Applications

Power Factor Correction (PFC) circuits.
Full bridge and half bridge topologies.
Push-pull and uninterruptible power supplies.
Zero voltage and zero current switching circuits.

FGB30N6S2D FAQs

7 frequently asked questions generated from this part’s specifications.

What is the collector-emitter breakdown voltage of the FGB30N6S2D?

600 V.

What package is the FGB30N6S2D available in?

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, surface mount.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the FGB30N6S2D RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the maximum continuous collector current at 25°C?

45 A.

What is the typical gate charge?

23 nC at Vge=15V.

What is the avalanche energy rating?

150 mJ at ICE=12A, L=2mH, VDD=50V.

Category	Transistors - IGBTs - Single
Manufacturer Name	On Semiconductor
Current	45 A
Gate Charge	23 nC
Input Type	Standard
Lead Style	Gull Wing
Mounting Type	Surface Mount
Operating Temperature	-55°C to 150°C
Power	167 W
Reverse Recovery Time (trr)	46 ns
Storage Temperature	-55°C to 150°C
Supplier Device Package	D²PAK (TO-263)
Switching Energy	55 µJ
Td (on	6 ns
Termination Style	Gull Wing
Test Condition	390V, 12A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage	600 V