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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
33,600 pcs
|
33600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Storage Temperature | |
| Supplier Device Package | |
| Switching Energy | |
| Switching Energy (Eoff) | |
| Td (on | |
| Test Condition | |
| Turn-Off Delay Time (td(off)) | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The FGB20N60SFD-F085 is a 600V, 20A Field Stop IGBT from On Semiconductor, designed for high-efficiency power switching applications. It offers a low collector-emitter saturation voltage of 2.85V maximum at 15V gate drive and 20A collector current, reducing conduction losses. The device features fast switching with turn-on energy of 310 µJ and turn-off energy of 130 µJ under standard test conditions. Gate charge is 63 nC, enabling efficient gate drive design.
The IGBT is housed in a surface-mount D2PAK (TO-263) package, suitable for automated assembly. It operates over a junction temperature range of -55°C to 150°C. The part is listed as RoHS3 compliant, though this status is unverified. Typical applications include motor drives, power supplies, and induction heating systems where high efficiency and reliability are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.19 | $5.19 |
| 10+ | $3.44 | $3.44 |
| 100+ | $2.45 | $2.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB; supplier device package D²PAK (TO-263).
-55°C to 150°C (junction temperature).
It is listed as RoHS3 Compliant, but this status is unverified.
63 nC.
Turn-on energy (Eon) is 310 µJ and turn-off energy (Eoff) is 130 µJ at Vce=400V, Ic=20A, Rg=10Ω, Vge=15V.
Maximum 2.85V at Vge=15V, Ic=20A.