FGAF40S65AQ The FGAF40S65AQ is a 650V, 40A Trench Field Stop IGBT from On Semiconductor. It features low saturation voltage of 1.6V typical and is packaged in a TO-3P-3 Full Pack.
Mfr Part #:

FGAF40S65AQ

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FGAF40S65AQ is a 650V, 40A Trench Field Stop IGBT from On Semiconductor. It features low saturation voltage of 1.6V typical and is packaged in a TO-3P-3 Full Pack.
✓ Total Stock: 47,954 pcs
$ Price Range: $1.31 - $4.15

FGAF40S65AQ Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
47,954 pcs
47954 pcs On Request 1 On Request On Request On Request On Request On Request

FGAF40S65AQ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

FGAF40S65AQ Description

Short technical summary and product information.

The FGAF40S65AQ is a 650V, 40A IGBT from On Semiconductor, built with Trench Field Stop 4th generation technology. It is designed for applications such as power factor correction (PFC) and welding equipment, where low conduction and switching losses are critical. The device integrates a monolithic reverse conducting diode.

 

Key electrical specifications include a collector-emitter voltage (VCES) of 650V, DC collector current of 80A at 25°C and 40A at 100°C, and a pulsed collector current capability of 160A. The typical saturation voltage (VCE(sat)) is 1.6V at 40A, 15V gate drive. Switching energy is 132 µJ (on) and 62 µJ (off) under test conditions of 400V, 10A, 6Ω, 15V. Gate charge is 75 nC.

 

The device is housed in a TO-3P-3 Full Pack (TO-3PF-3) through-hole package. It has a maximum junction temperature of 175°C and a thermal resistance junction-to-case of 1.6°C/W. The mounting type is through hole.

 

This IGBT is Pb-Free and RoHS compliant, with a moisture sensitivity level (MSL) of 1 (unlimited). It is also REACH unaffected.

FGAF40S65AQ Quick Information

Product Type: IGBT
Series: FGAF40S65AQ
Canonical Name: FGAF40S65AQ
Subcategory: Single IGBT

FGAF40S65AQ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FGAF40S65AQ Estimated Pricing

Qty Low High
1+ $4.15 $4.15
30+ $2.28 $2.28
120+ $1.86 $1.86
510+ $1.56 $1.56
1,020+ $1.45 $1.45
2,010+ $1.36 $1.36
5,010+ $1.31 $1.31

Estimated market price range - modelled values for guidance only, not live distributor offers.

FGAF40S65AQ Features

  • 650V collector-emitter voltage rating.
  • 40A DC collector current at 100°C.
  • Trench Field Stop 4th generation technology.
  • Low saturation voltage of 1.6V typical.
  • TO-3P-3 Full Pack through-hole package.

FGAF40S65AQ Applications

  • Used in power factor correction (PFC) circuits.
  • Suitable for welding equipment.
  • Ideal for motor drives and inverters.

FGAF40S65AQ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the FGAF40S65AQ?

The collector-emitter voltage (VCES) is 650V.

What package type is the FGAF40S65AQ?

It is available in a TO-3P-3 Full Pack (TO-3PF-3) through-hole package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the FGAF40S65AQ RoHS compliant?

Yes, it is RoHS3 compliant and Pb-Free, though compliance confidence is low due to unverified status.

What is the gate charge of the FGAF40S65AQ?

The gate charge is 75 nC.

What is the typical saturation voltage?

The typical saturation voltage VCE(sat) is 1.6V at IC=40A, VGE=15V.

What is the switching energy of the FGAF40S65AQ?

The typical switching energy is 132 µJ (on) and 62 µJ (off) under 400V, 10A, 6Ω, 15V test conditions.

Home

Categories