| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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80 pcs
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80 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Vce(on) (Max) @ Vge, Ic | |
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The FGAF30S65AQ is an N-channel IGBT from ON Semiconductor, designed for high-efficiency power switching applications. It utilizes Trench Field Stop technology to achieve low on-state voltage drop and fast switching performance. The device is rated for a collector-emitter voltage of 650V and a collector current of 60A (with note of possible 30A rating from introtext). It has a maximum power dissipation of 83W and operates over a junction temperature range of -55°C to 175°C. Key electrical characteristics include a collector-emitter saturation voltage of 2.1V typical at 15V gate drive and 30A, a total gate charge of 58 nC, and switching energies of 515 µJ (turn-on) and 140 µJ (turn-off) under test conditions of 400V, 15A, and 13Ω gate resistance. The device is housed in a TO-3P-3 Full Pack (also known as TO-3PF-3) through-hole package, which offers enhanced thermal performance and isolation. It is suitable for applications such as motor drives, inverters, and power supplies where high voltage and current handling are required. The device is compliant with RoHS3 and REACH, though these compliance statuses are unverified.
The collector-emitter voltage rating is 650V.
It is offered in a TO-3P-3 Full Pack (TO-3PF-3) through-hole package.
The junction temperature range is -55°C to 175°C.
It is listed as RoHS3 compliant, but this is unverified.
The specification lists 60A, but the introtext indicates 30A; this conflict is noted.
The total gate charge is 58 nC.
Turn-on energy is 515 µJ and turn-off energy is 140 µJ under test conditions of 400V, 15A, 13Ω, 15V.