| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
63,464 pcs
|
63464 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The FGAF20S65AQ is a 650V, 20A Trench Field Stop IGBT manufactured by ON Semiconductor. This single IGBT is designed for high-efficiency power switching applications.
Key electrical characteristics include a maximum collector-emitter saturation voltage of 2.1V at 15V gate drive and 20A collector current. The gate charge is 38 nC, and switching energies are 345 µJ (turn-on) and 95 µJ (turn-off) under test conditions of 400V, 10A, 23Ω, and 15V. Reverse recovery time is 235 ns.
The device is housed in a TO-3P-3 Full Pack package (also known as TO-3PF-3) with through-hole mounting. It can dissipate up to 75W and operates over a junction temperature range of -55°C to 175°C.
This IGBT is suitable for medium-power switching applications such as motor drives, inverters, and power supplies where low conduction and switching losses are required.
| Qty | Low | High |
|---|---|---|
| 183+ | $1.64 | $1.64 |
| 600+ | $0.96 | $0.96 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
TO-3P-3 Full Pack (also referred to as TO-3PF-3).
-55°C to 175°C (junction temperature).
The part is marked as RoHS3 compliant, but this status is unverified. Please confirm with the manufacturer.
38 nC.