| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Storage Temperature | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The FGAF20N60SMD is a 600V, 40A Field Stop IGBT designed for high-efficiency power switching applications. Manufactured by ON Semiconductor, this device offers a low collector-emitter saturation voltage of 1.7V at 15V gate drive and 20A collector current.
With a maximum power dissipation of 75W and an operating junction temperature range of -55°C to 175°C, it is suitable for demanding environments. The device features typical switching energies of 452µJ (turn-on) and 141µJ (turn-off) under test conditions of 400V, 20A, and 10Ω gate resistance.
The FGAF20N60SMD is housed in a TO-3P-3 Full Pack package (supplier device package TO-3PF) with through-hole mounting. It has a total gate charge of 64 nC and typical turn-on/turn-off delay times of 12ns/91ns. The reverse recovery time is 26.7 ns.
| Qty | Low | High |
|---|---|---|
| 127+ | $2.36 | $2.36 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
40A.
1.7V at Vge=15V, Ic=20A.
TO-3P-3 Full Pack (supplier device package TO-3PF).
-55°C to 175°C (junction).
RoHS3 Compliant (unverified).