FGAF20N60SMD The FGAF20N60SMD is a 600V, 40A Field Stop IGBT from ON Semiconductor. It features low saturation voltage (1.7V typical) and fast switching performance.
Mfr Part #:

FGAF20N60SMD

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FGAF20N60SMD is a 600V, 40A Field Stop IGBT from ON Semiconductor. It features low saturation voltage (1.7V typical) and fast switching performance.
✓ Total Stock: 200 pcs
$ Price Range: $2.36

FGAF20N60SMD Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
200 pcs
200 pcs On Request 1 On Request On Request 18+ On Request On Request

FGAF20N60SMD Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Medical Grade
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Storage Temperature
Supplier Device Package
Switching Energy
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

FGAF20N60SMD Description

Short technical summary and product information.

The FGAF20N60SMD is a 600V, 40A Field Stop IGBT designed for high-efficiency power switching applications. Manufactured by ON Semiconductor, this device offers a low collector-emitter saturation voltage of 1.7V at 15V gate drive and 20A collector current.

 

With a maximum power dissipation of 75W and an operating junction temperature range of -55°C to 175°C, it is suitable for demanding environments. The device features typical switching energies of 452µJ (turn-on) and 141µJ (turn-off) under test conditions of 400V, 20A, and 10Ω gate resistance.

 

The FGAF20N60SMD is housed in a TO-3P-3 Full Pack package (supplier device package TO-3PF) with through-hole mounting. It has a total gate charge of 64 nC and typical turn-on/turn-off delay times of 12ns/91ns. The reverse recovery time is 26.7 ns.

FGAF20N60SMD Quick Information

Product Type: IGBT
Canonical Name: FGAF20N60SMD Field Stop IGBT, 600V, 40A, TO-3PF
Subcategory: Single IGBT

FGAF20N60SMD Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FGAF20N60SMD Estimated Pricing

Qty Low High
127+ $2.36 $2.36

Estimated market price range - modelled values for guidance only, not live distributor offers.

FGAF20N60SMD Features

  • 600V collector-emitter breakdown voltage.
  • 40A continuous collector current rating.
  • Low Vce(sat) of 1.7V typical.
  • Fast switching with 452/141 µJ energy.
  • TO-3PF through-hole package.

FGAF20N60SMD Applications

  • Used in motor drive inverters.
  • Suitable for UPS and power supplies.
  • Ideal for induction heating systems.
  • Applicable in welding equipment.

FGAF20N60SMD FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the FGAF20N60SMD?

600V.

What is the maximum collector current?

40A.

What is the typical saturation voltage?

1.7V at Vge=15V, Ic=20A.

What package is the FGAF20N60SMD available in?

TO-3P-3 Full Pack (supplier device package TO-3PF).

What is the operating temperature range?

-55°C to 175°C (junction).

Is the FGAF20N60SMD RoHS compliant?

RoHS3 Compliant (unverified).

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