| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
24,750 pcs
|
24750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,039 pcs
|
2039 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
This is a 650V, 80A Trench Field Stop IGBT from On Semiconductor, designed for high efficiency power switching applications.
Electrical characteristics include a collector-emitter saturation voltage of 2.3V max at 15V gate voltage and 40A collector current. Gate charge is 55.5 nC. Switching energies are 1.37 mJ (turn-on) and 250 µJ (turn-off) under test conditions of 400V, 40A, 6 Ohm, 15V. Turn-on delay time is 16.8 ns, turn-off delay time is 54.4 ns.
The device is housed in a TO-3P-3/SC-65-3 package with through-hole mounting, supplied in TO-3PN. Operating temperature range is -55°C to 175°C junction temperature. Power dissipation is 238 W.
| Qty | Low | High |
|---|---|---|
| 450+ | $1.72 | $1.72 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
TO-3P-3, SC-65-3; supplier device package is TO-3PN.
-55°C to 175°C junction temperature.
The part is listed as RoHS3 compliant, but this status is unverified.
Turn-on energy is 1.37 mJ, turn-off energy is 250 µJ at 400V, 40A, 6 Ohm, 15V.
55.5 nC.
Maximum 2.3V at 15V gate voltage, 40A collector current.