FGA60N65SMD The FGA60N65SMD is a 650V, 120A Field Stop IGBT from On Semiconductor. It features low saturation voltage and fast switching for power applications.
Mfr Part #:

FGA60N65SMD

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FGA60N65SMD is a 650V, 120A Field Stop IGBT from On Semiconductor. It features low saturation voltage and fast switching for power applications.
✓ Total Stock: 14,232 pcs
$ Price Range: $3.04 - $7.31

FGA60N65SMD Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,166 pcs
7166 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
3,600 pcs
3600 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,466 pcs
3466 pcs On Request 1 On Request On Request On Request On Request On Request

FGA60N65SMD Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

FGA60N65SMD Description

Short technical summary and product information.

The FGA60N65SMD is a 650V, 120A Field Stop IGBT from On Semiconductor, designed for applications requiring low conduction and switching losses. It features a maximum junction temperature of 175°C and a positive temperature coefficient for easy parallel operation.

 

Key electrical specifications include a collector-to-emitter saturation voltage of 1.9V typical at 60A, a gate threshold voltage range of 3.5V to 6.0V, and a maximum power dissipation of 600W at 25°C case temperature. The device also includes a co-packaged diode with a forward current rating of 60A at 25°C.

 

The FGA60N65SMD is housed in a TO-3P-3 (SC-65-3) through-hole package and is RoHS and REACH compliant. It is suitable for solar inverters, UPS, SMPS, welders, and PFC circuits.

FGA60N65SMD Quick Information

Product Type: IGBT
Canonical Name: FGA60N65SMD Field Stop IGBT
Subcategory: Single IGBT

FGA60N65SMD Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FGA60N65SMD Estimated Pricing

Qty Low High
1+ $7.31 $7.31
30+ $4.21 $4.21
120+ $3.53 $3.53
510+ $3.04 $3.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

FGA60N65SMD Features

  • 650V collector-to-emitter breakdown voltage.
  • 120A continuous collector current at 25°C.
  • Low saturation voltage of 1.9V typical.
  • Maximum junction temperature of 175°C.
  • RoHS and REACH compliant.

FGA60N65SMD Applications

  • Used in solar inverter power stages.
  • Suitable for UPS and SMPS designs.
  • Ideal for welding equipment power circuits.
  • Applied in power factor correction (PFC).

FGA60N65SMD FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-to-emitter voltage of the FGA60N65SMD?

The maximum collector-to-emitter voltage (VCES) is 650V.

What is the maximum collector current rating at 25°C?

The maximum collector current (IC) at TC = 25°C is 120A.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the FGA60N65SMD RoHS compliant?

Yes, the FGA60N65SMD is RoHS3 compliant.

What package is the FGA60N65SMD available in?

The FGA60N65SMD is available in a TO-3P-3 (SC-65-3) through-hole package.

What is the typical collector-to-emitter saturation voltage?

The typical VCE(sat) is 1.9V at IC = 60A and VGE = 15V.

What is the maximum power dissipation at 25°C?

The maximum power dissipation (PD) at TC = 25°C is 600W.

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